TM GenX3 1400V V = 1400V IXGH28N140B3H1 CES I = 28A IGBTs w/ Diode IXGX28N140B3H1 C110 V 3.60V IXGK28N140B3H1 CE(sat) Avalanche Rated TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings PLUS247 (IXGX) V T = 25C to 150C 1400 V CES J V T = 25C to 150C, R = 1M 1400 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C I T = 25C 60 A Tab C25 C E I T = 110C 28 A C110 C I T = 110C 15 A TO-264 (IXGK) F110 C I T = 25C, 1ms 150 A CM C I T = 25C28A A C E T = 25C 360 mJ AS C G C SSOA V = 15V, T = 125C, R = 5 I = 120 A GE VJ G CM E (RBSOA) Clamped Inductive Load V < V CES CE Tab P T = 25C 300 W C C G = Gate E = Emitter T -55 ... +150 C J C = Collector Tab = Collector T 150 C JM T -55 ... +150 C Features stg T Maximum Lead Temperature for Soldering 300 C L z Optimized for Low Conduction and T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD Switching Losses z M Mounting Torque (IXGH & IXGK) 1.13/10 Nm/lb.in. Square RBSOA d z F Mounting Force (IXGX) 20..120/4.5..27 N/lb. Avalanche Rated C z Anti-Parallel Ultra Fast Diode Weight TO-247 & PLUS247 6 g z High Current Handling Capability TO-264 10 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters I V = V , V = 0V 50 A CES CE CES GE z UPS Note 2, T = 125C 1 mA z J Motor Drives z SMPS I V = 0V, V = 20V 100 nA GES CE GE z PFC Circuits z V I = I , V = 15V, Note 1 3.00 3.60 V Battery Chargers CE(sat) C C110 GE z T = 125C 3.05 Welding Machines J 2010 IXYS CORPORATION, All Rights Reserved DS99736A(11/10)IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 12 19 S fs C C110 CE C 1830 pF ies C V = 25V, V = 0V, f = 1 MHz 163 pF oes CE GE C 46 pF res Q 88 nC g(on) Q I = I , V = 15V, V = 0.5 V 12 nC ge C C110 GE CE CES Q 38 nC gc t 16 ns d(on) Inductive load, T = 25C J t 36 ns ri I = I , V = 15V E 3.6 mJ C C110 GE on t 190 400 ns V = 960V, R = 5 d(off) CE G t 360 ns Note 3 fi E 3.9 6.5 J off t 16 ns d(on) Inductive load, T = 125C t 50 ns J ri I = I , V = 15V E 7.3 mJ C C110 GE on t 215 ns d(off) V = 960V, R = 5 CE G t 700 ns fi Note 3 E 6.5 mJ off R 0.42 C/W thJC R 0.21 C/W thCs 0.15 C/W Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V, Note 1 3.0 V F F GE T = 150C 2.65 V J t 350 ns rr I = 20A, V = 0V, -di /dt = -200A/s, F GE F V = 1200V, T = 125C I 18.5 A R J RM R 0.90 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537