TM GenX3 600V IGBT V = 600V IXGK320N60A3 CES I = 210A IXGX320N60A3 C110 V 1.30V CE(sat) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J G V T = 25C to 150C, R = 1M 600 V CGR J GE C E V Continuous 20 V GES Tab V Transient 30 V GEM PLUS247 (IXGX) I T = 25C (Chip Capability) 320 A C25 C I T = 110C 210 A C110 C I Terminal Current Limit 160 A LRMS I T = 25C, 1ms 700 A CM C SSOA V = 15V, T = 125C, R = 1 I = 320 A GE VJ G CM G G C (RBSOA) Clamped Inductive Load 0.8 V Tab CES E P T = 25C 1000 W C C T -55 ... +150 C G = Gate E = Emitter J T 150 C C = Collector Tab = Collector JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD Features M Mounting Torque (IXGK) 1.13/10 Nm/lb.in d F Mounting Force (IXGX) 20..120/4.5..27 N/lb C Optimized for Low Conduction Losses Weight TO-264 10 g High Avalanche Capability PLUS247 6 g International Standard Packages Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 1mA, V = 0V 600 V CES C GE Power Inverters V I = 4mA, V = V 3.0 5.5 V GE(th) C CE GE UPS Motor Drives I V = V , V = 0V 150 A CES CE CES GE SMPS T = 125C 1.5 mA J PFC Circuits I V = 0V, V = 20V 400 nA GES CE GE Battery Chargers V I = 100A, V = 15V, Note 1 1.05 1.30 V Welding Machines CE(sat) C GE I = 320A 1.46 V Lamp Ballasts C Inrush Current Protection Circuits 2015 IXYS CORPORATION, All Rights Reserved DS99583D(04/14)IXGK320N60A3 IXGX320N60A3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 75 125 S fs C CE C 18 nF ies C V = 25V, V = 0V, f = 1 MHz 985 pF oes CE GE C 150 pF res Q 560 nC g(on) Q I = 80A, V = 15V, V = 0.5 V 94 nC ge C GE CE CES Q 195 nC gc t 63 ns d(on) Resistive load, T = 25C J t 68 ns Terminals: 1 - Gate 2, 4 - Collector r I = 80A, V = 15V C GE 3 - Emitter t 290 ns d(off) V = 400V, R = 1 CE G t 740 ns f t 62 ns d(on) Resistive load, T = 125C J t 77 ns r I = 80A, V = 15V C GE t 330 ns d(off) V = 400V, R = 1 CE G t 1540 ns f R 0.125C/W thJC R 0.15 C/W thCK TM PLUS247 Outline Note 1. Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537