TM GenX3 300V IGBTs V = 300V IXGK400N30A3 CES I = 400A IXGX400N30A3 C25 V 1.15V CE(sat) Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 300 V CES J C Tab EE V T = 25C to 150C, R = 1M 300 V CGR J GE V Continuous 20 V GES TM V Transient 30 V PLUS247 (IXGX) GEM I T = 25C (Chip Capability) 400 A C25 C I T = 110C 200 A C110 C I Terminal Current Limit 160 A LRMS I T = 25C, 1ms 1200 A CM C G SSOA V = 15V, T = 125C, R = 1 I = 400 A GE VJ G CM C Tab (RBSOA) Clamped Inductive Load 0.8 V E CES P T = 25C 1000 W C C G = Gate E = Emitter T -55 ... +150 C C = Collector Tab = Collector J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10 260 C z SOLD Optimized for Low Conduction Losses z M Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. High Avalanche Capability d z F Mounting Force ( IXGX ) 20..120/4.5..27 N/lb. International Standard Packages C Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 1mA, V = 0V 300 V CES C GE z Power Inverters V I = 4mA, V = V 3.0 5.0 V z GE(th) C CE GE UPS z Motor Drives I V = V , V = 0V 50 A CES CE CES GE z SMPS T = 125C 2 mA J z PFC Circuits I V = 0V, V = 20V 400 nA GES CE GE z Battery Chargers z V I = 100A, V = 15V, Note 1 1.15 V Welding Machines CE(sat) C GE z I = 400A 1.70 V Lamp Ballasts C z Inrush Current Protection Circuits 2009 IXYS CORPORATION, All Rights Reserved DS99584B(12/09)IXGK400N30A3 IXGX400N30A3 Symbol Test Conditions Characteristic Values TO-264 (IXGK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 100 170 S fs C CE C 19 nF ies C V = 25V, V = 0V, f = 1 MHz 1350 pF oes CE GE C 190 pF res Q 560 nC g(on) Q I = 100A, V = 15V, V = 0.5 V 83 nC ge C GE CE CES Q 185 nC gc t 45 ns d(on) Resistive load, T = 25C J t 45 ns r I = 100A, V = 15V C GE t 210 ns d(off) V = 240V, R = 1 CE G t 107 ns f t 47 ns d(on) Resistive load, T = 125C J t 53 ns r I = 100A, V = 15V C GE t 240 ns d(off) V = 240V, R = 1 CE G t 315 ns f R 0.125 C/W thJC R 0.15 C/W thCK TM PLUS247 (IXGX) Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537