Advance Technical Data TM V = 600 V IXGK60N60B2D1 HiPerFAST CES IXGX 60N60B2D1 I = 75 A IGBT with Diode C25 V < 1.8 V CE(sat) Optimized for 10-25 kHz t = 100 ns fi(typ) hard switching and up to 100 kHz resonant switching Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V (TAB) CGR J GE G C V Continuous 20 V GES E V Transient 30 V GEM PLUS247 (IXGX) I T = 25C (limited by leads) 75 A C25 C I T = 110C60A C110 C I T = 25C, 1 ms 300 A CM C (TAB) SSOA V = 15 V, T = 125C, R = 10 I = 150 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped inductive load V 600 V E = Emitter Tab = Collector CE P T = 25C 500 W C C T -55 ... +150 C Features J Square RBSOA T 150 C JM High current handling capability T -55 ... +150 C stg MOS Gate turn-on for drive simplicity M Mounting torque, TO-264 1.13/10 Nm/lb.in. d Fast Recovery Epitaxial Diode (FRED) Weight TO-264 10 g with soft recovery and low I RM PLUS247 6 g Maximum lead temperature for soldering 300 C Applications 1.6 mm (0.062 in.) from case for 10 s Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers Symbol Test Conditions Characteristic Values AC motor speed control (T = 25C, unless otherwise specified) J DC servo and robot drives Min. Typ. Max. V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = V 300 A CES CE CES V = 0 V T = 125C 5 mA GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE Space savings (two devices in one package) V I = 50 A, V = 15 V 1.8 V CE(sat) C GE Easy to mount with 1 screw Note 1 2003 IXYS All rights reserved DS99114(11/03)IXGK60N60B2D1 IXGX 60N60B2D1 TO-264 AA Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g I = 50 A V = 10 V, 40 58 S fs C CE Note 1 C 3900 pF ies C V = 25 V, V = 0 V, f = 1 MHz 340 pF oes CE GE C 100 pF res Q 170 nC g Q I = 50 A, V = 15 V, V = 0.5 V 25 nC ge C GE CE CES Q 57 nC gc Dim. Millimeter Inches Min. Max. Min. Max. t 28 ns A 4.82 5.13 .190 .202 d(on) A1 2.54 2.89 .100 .114 Inductive load, T = 25C t 30 ns J ri A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 I = 50 A, V = 15 V t 160 270 ns C GE d(off) b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 V = 400 V, R = R = 3.3 t 100 170 ns CE G off fi c 0.53 0.83 .021 .033 E 1.0 2.5 mJ D 25.91 26.16 1.020 1.030 off E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC t 28 ns d(on) J 0.00 0.25 .000 .010 t 36 ns K 0.00 0.25 .000 .010 ri Inductive load, T = 125C J L 20.32 20.83 .800 .820 E 1.5 mJ on L1 2.29 2.59 .090 .102 I = 50 A, V = 15 V C GE P 3.17 3.66 .125 .144 t 310 ns d(off) Q 6.07 6.27 .239 .247 V = 400 V, R = R = 2.0 CE G off t 240 ns Q1 8.38 8.69 .330 .342 fi R 3.81 4.32 .150 .170 E 2.8 mJ off R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 R 0.25 K/W T 1.57 1.83 .062 .072 thJC R 0.15 K/W thCK PLUS247 Outline Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 60 A, V = 0 V, 2.1 V F F GE Note 1 T = 150C 1.4 V J I I = 60 A, V = 0 V, -di /dt = 100 A/ T = 100C 8.3 A RM F GE F J V = 100 V R t I = 1 A -di/dt = 200 A/ms V = 30 V 35 ns rr F R Terminals: 1 - Gate R 0.85 K/W thJC 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Note 1: Pulse test, t 300 s, duty cycle 2 % Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343