Preliminary Technical Information TM GenX3 600V IGBT V = 600V IXGK72N60A3H1 CES w/Diode I = 72A IXGX72N60A3H1 C110 V 1.35V CE(sat) t = 250ns Ultra-Low Vsat PT IGBTs for fi(typ) up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 600 V CES J C E V T = 25 C to 150 C, R = 1M 600 V CGR J GE Tab V Continuous 20 V GES PLUS247 (IXGX) V Transient 30 V GEM I T = 25 C75A C25 C I T = 110 C72A C110 C I T = 110 C68A F110 C G G I T = 25 C, 1ms 400 A C CM C Tab E SSOA V = 15V, T = 125C, R = 3 I = 150 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES G = Gate E = Emitter C = Collector Tab = Collector P T = 25 C 540 W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features M Mounting Torque (TO-264) 1.13 / 10 Nm/lb.in d F Mounting Force (PLUS247) 20..120 / 4.5..27 N/lb Optimized for Low Conduction Losses C Square RBSOA T Maximum Lead Temperature for Soldering 300 C L Anti-Parallel Ultra Fast Diode T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD International Standard Packages Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250A, V = V 3.0 5.0 V Power Inverters GE(th) C CE GE UPS I V = V , V = 0V 300 A CES CE CES GE Motor Drives T = 125C 5 mA J SMPS I V = 0V, V = 20V 100 nA PFC Circuits GES CE GE Battery Chargers V I = 60A, V = 15V, Note 1 1.35 V CE(sat) C GE Welding Machines Lamp Ballasts Inrush Current Protection Circuits 2013 IXYS CORPORATION, All Rights Reserved DS100144A(8/13)IXGK72N60A3H1 IXGX72N60A3H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 48 75 S fs C CE C 6600 pF ies C V = 25V, V = 0V, f = 1MHz 360 pF oes CE GE C 80 pF res Q 230 nC g(on) Q I = 60A, V = 15V, V = 0.5 V 40 nC ge C GE CE CES Q 80 nC gc t 31 ns d(on) t Inductive load, T = 25C 34 ns ri J E 1.4 mJ Terminals: 1 = Gate on I = 50A, V = 15V C GE 2,4 = Collector 3 = Emitter t 320 ns d(off) V = 480V, R = 3 CE G t 250 ns fi E 3.5 mJ off t 29 ns d(on) Inductive load, T = 125C t J 34 ns ri E 2.6 mJ I = 50A, V = 15V on C GE t 510 ns d(off) V = 480V, R = 3 CE G t 375 ns fi E 6.5 mJ off R 0.23 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Values J Symbol Test Conditions Min. Typ. Max. V I = 60A, V = 0V, Note 1 1.6 2.3 V F F GE T = 150C 1.4 1.8 V J I I = 60A, V = 0V, T = 100C 8.3 A RM F GE J Terminals: 1 - Gate 2 - Collector 3 - Emitter t I = 60A, -di/dt = 200A/s, V = 300V 140 ns rr F R R 0.3 C/W thJC Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 Note 1: Pulse test, t 300 s, duty cycle, d 2%. 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 PRELIMANARY TECHNICAL INFORMATION D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 The product presented herein is under development. The Technical Specifications offered are e 5.45 BSC .215 BSC derived from a subjective evaluation of the design, based upon prior knowledge and experi- L 19.81 20.32 .780 .800 ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right L1 3.81 4.32 .150 .170 to change limits, test conditions, and dimensions without notice. Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537