X-On Electronics has gained recognition as a prominent supplier of IXGK82N120B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGK82N120B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGK82N120B3 IXYS

IXGK82N120B3 electronic component of IXYS
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Part No.IXGK82N120B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors GenX3 1200V IGBTs
Datasheet: IXGK82N120B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 29.4045 ea
Line Total: USD 29.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 29.4045
2 : USD 27.8033

   
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We are delighted to provide the IXGK82N120B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGK82N120B3 and other electronic components in the IGBT Transistors category and beyond.

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The IXGK82N120B3 is a GenX3 1200V IGBT with a maximum drain current of 82A used in high-efficiency switching applications. This IGBT is manufactured by IXYS, a leading supplier of power semiconductor components. The device has a double-diffused N-channel structure with a high-temperature super junction technology that provides a low resistance path for current conduction. This IGBT is suitable for use in high power switching, welding, and motor control applications. Additionally, the IGBT has a high-speed switching frequency and a high-temperature and reverse-bias safe operating area (RBSOA).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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