V = 1700V High Voltage IXGN100N170 CES I = 95A IGBT C90 V 3.0V CE(sat) E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E V T = 25C to 150C 1700 V CES J G V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 160 A E C25 C I T = 90C 95 A C C90 C I T = 25C, 1ms 600 A CM C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as SSOA V = 15V, T = 125C, R = 1 I = 200 A GE VJ G CM Main or Kelvin Emitter (RBSOA) Clamped Inductive Load 0.8 V CES t V = 15V, V = 1250V, T = 125C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G P T = 25C 735 W C C Features T -55 ... +150 C J T 150 C JM Optimized for Low Conduction and T -55 ... +150 C stg Switching Losses Isolation Voltage 2500V~ V 50/60Hz t = 1min 2500 V~ ISOL Short Circuit Capability I 1mA t = 1s 3000 V~ ISOL International Standard Package M Mounting Torque 1.5/13 Nm/lb.in. High Current Handling Capability d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Advantages High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters UPS BV I = 3mA, V = 0V 1700 V CES C GE Motor Drives V I = 8mA, V = V 3.0 5.0 V GE(th) C CE GE SMPS PFC Circuits I V = V , V = 0V 50 A CES CE CES GE Welding Machines T = 125C 3 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = 100A, V = 15V, Note 1 2.5 3.0 V CE(sat) C GE 2016 IXYS CORPORATION, All Rights Reserved DS100091B(10/16)IXGN100N170 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 36 64 S fs C CE C 9200 pF ies C V = 25V, V = 0V, f = 1MHz 455 pF oes CE GE C 150 pF res Q 425 nC g Q I = 100A, V = 15V, V = 0.5 V 65 nC ge C GE CE CES Q 186 nC gc t 35 ns d(on) Resistive load, T = 25C J t 192 ns r I = 100A, V = 15V C GE t 285 ns d(off) V = 0.5 V , R = 1 CE CES G t 395 ns f t 35 ns d(on) Resistive load, T = 125C J t 250 ns r I = 100A, V = 15V C GE t 285 ns V = 0.5 V , R = 1 d(off) CE CES G t 435 ns f R 0.17 C/W thJC R 0.05 C/W thCS Note: 1. Pulse test, t 300 s, duty cycle, d 2%. SOT-227B (IXGN) OUTLINE M4-7 NUT J A (4 PLACES) B D N C M S L E F G H O U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537