TM V = 600V IXGN120N60A3 GenX3 600V IGBT CES IXGN120N60A3D1 I = 120A C110 V 1.35V CE(sat) Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J E V T = 25C to 150C, R = 1M 600 V CGR J GE C V Continuous 20 V GES G = Gate, C = Collector, E = Emitter V Transient 30 V GEM Either Emitter Terminal can be used as Main or Kelvin Emitter I T = 25C 200 A C25 C I T = 110C 120 A C110 C Features I T = 110C IXGN120N60A3D1 36 A F110 C I T = 25C, 1ms 800 A CM C Optimized for Low Conduction SSOA V = 15V, T = 125C, R = 1.5 I = 200 A GE VJ G CM Losses Square RBSOA (RBSOA) Clamped Inductive Load V < 600 V CES Anti-Parallel Ultra Fast Diode P T = 25C 595 W C C International Standard Package T -55 ... +150 C miniBLOC J UL Recognized T 150 C JM Aluminium Nitride Isolation T -55 ... +150 C stg Isolation Voltage 3000 V~ Low V for Minimum On-State V 50/60Hz t = 1min 2500 V~ CE(sat) ISOL I 1mA t = 1s 3000 V~ ISOL M Mounting Torque 1.5/13 Nm/lb.in. d Advantages Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in. High Power Density Weight 30 g Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters V I = 500A, V = V 3.0 5.0 V GE(th) C CE GE UPS I V = V V = 0V, Note 3 120N60A3 50 A CES CE CES, GE Motor Drives 120N60A3D1 650 A SMPS T = 125C 120N60A3 1 mA J PFC Circuits 120N60A3D1 5 mA Battery Chargers I V = 0V, V = 20V 400 nA GES CE GE Welding Machines Lamp Ballasts V I = 100A, V = 15V, Note 1 1.20 1.35 V CE(sat) C GE Inrush Current Protection Circuits High Power Density 2009 IXYS CORPORATION, All Rights Reserved DS99927B(02/09)IXGN120N60A3 IXGN120N60A3D1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 65 108 S fs C CE C 14.8 nF ies C V = 25V, V = 0V, f = 1MHz 800 pF oes CE GE C 140 pF res Q 450 nC g(on) Q I = I , V = 15V, V = 0.5 V 67 nC ge C C110 GE CE CES Q 130 nC gc t 39 ns d(on) t 82 ns ri Inductive Load, T = 25C J E 2.7 mJ on I = 100A, V = 15V C GE t 295 ns d(off) V = 480V, R = 1.5, Note 2 t 260 CE G ns fi E 6.6 mJ off t 40 ns d(on) t 83 ns ri Inductive Load, T = 125C J E 3.5 mJ on I = 100A, V = 15V C GE t 420 ns d(off) V = 480V, R = 1.5, Note 2 CE G t 410 ns fi E 10.4 mJ off R 0.21 C/W thJC R 0.05 C/W thCK Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min Typ. Max. J V I = 60A, Note 1 2.1 V F F V = 0V T = 150C 1.4 V GE J I I = 60A, V = 0V, -di /dt = 100A/s 8.0 A RM F GE F t V =300V, T = 100C 175 ns rr R J R 0.85 C/W thJC Note: 1. Pulse Test, t 300s Duty Cycle, d 2%. 2. Remarks: Switching Times may Increase for V (Clamp) > 0.8 V , Higher T or Increased R . CE CES J G 3. Parts must be HeatSunk for High Temperature I Measurements. CES IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537