Advance Technical Information High Voltage V = 1700V IXGN200N170 CES IGBT I = 160A C90 V 2.6V CE(sat) t = 535ns fi(typ) E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1700 V CES J V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES E V Transient 30 V GEM C I T = 25C (Chip Capability) 280 A C25 C I Terminal Current Limit 200 A G = Gate, C = Collector, E = Emitter LRMS I T = 90C 160 A either emitter terminal can be used as C90 C Main or Kelvin Emitter I T = 25C, 1ms 1050 A CM C SSOA V = 15V, T = 125C, R = 1 I = 300 A GE VJ G CM (RBSOA) Clamped Inductive Load 1360 V P T = 25C 1250 W C C Features T -55 ... +150 C J T 150 C JM miniBLOC, with Aluminium Nitride T -55 ... +150 C stg Isolation V 50/60Hz t = 1min 2500 V~ International Standard Package ISOL I 1mA t = 1s 3000 V~ Isolation Voltage 2500V~ ISOL High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g Advantages High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 3mA, V = 0V 1700 V CES C GE UPS V I = 1mA, V = V 3.5 5.5 V GE(th) C CE GE Motor Drives SMPS I V = V , V = 0V 25 A CES CE CES GE PFC Circuits T = 125C 5 mA J Welding Machines I V = 0V, V = 20V 200 nA GES CE GE V I = 100A, V = 15V, Note 1 2.1 2.6 V CE(sat) C GE T = 125C 2.5 V J 2016 IXYS CORPORATION, All Rights Reserved DS100718(4/16)IXGN200N170 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXGN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 50 82 S fs C CE C 12.5 nF ies C V = 25V, V = 0V, f = 1MHz 580 pF oes CE GE C 220 pF res Q 540 nC g(on) Q I = 200A , V = 15V, V = 0.5 V 78 nC ge C 0 GE CE CES Q 265 nC gc t 37 ns d(on) t 133 ns Inductive load, T = 25C ri J E I = 100A, V = 15V 28 mJ on C GE t 320 ns V = 0.5 V , R = 1 d(off) CE CES G t 535 ns fi Note 2 E 30 mJ off t 40 ns d(on) Inductive load, T = 125C t 143 ns J ri I = 100A, V = 15V E 31 mJ C GE on V = 0.5 V , R = 1 t 430 ns CE CES G d(off) t Note 2 610 ns fi E 44 mJ off R 0.10 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537