TM V = 600V IXGN320N60A3 GenX3 600V IGBT CES I = 170A C110 V 1.30V CE(sat) Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 V T = 25 C to 150 C 600 V E CES J V T = 25C to 150C, R = 1M 600 V G CGR J GE V Continuous 20 V GES V Transient 30 V GEM E I T = 25 C (Chip Capability) 320 A C25 C C I T = 110 C 170 A C110 C I Terminal Current Limit 200 A LRMS G = Gate, C = Collector, E = Emitter I T = 25 C, 1ms 1200 A CM C SSOA V = 15V, T = 125C, R = 1 I = 320 A Either Emitter Terminal Can Be Used GE VJ G CM as Main or Kelvin Emitter (RBSOA) Clamped Inductive Load 0.8 V CES P T = 25C 735 W C C Features T -55 ... +150 C J T 150 C JM Optimized for Low Conduction Losses T -55 ... +150 C stg High Avalanche Capability V 50/60Hz t = 1min 2500 V~ Isolation Voltage 3000 V~ ISOL I 1mA t = 1s 3000 V~ ISOL International Standard Package M Mounting Torque 1.5/13 Nm/lb.in d Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in Advantages Weight 30 g High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 1mA, V = 0V 600 V UPS CES C GE Motor Drives V I = 4mA, V = V 3.0 5.5 V GE(th) C CE GE SMPS I V = V , V = 0V 150 A PFC Circuits CES CE CES GE T = 125C 1.5 mA Battery Chargers J Welding Machines I V = 0V, V = 20V 400 nA GES CE GE Lamp Ballasts Inrush Current Protection Circuits V I = 100A, V = 15V, Note 1 1.05 1.30 V CE(sat) C GE I = 320A 1.46 V C 2015 IXYS CORPORATION, All Rights Reserved DS99576E(01/15)IXGN320N60A3 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXGN) (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 70 125 S fs C CE C 18 nF ies C V = 25V, V = 0V, f = 1MHz 985 pF oes CE GE C 150 pF res Q 560 nC g(on) Q I = 80V, V = 15V, V = 0.5 V 94 nC ge C GE CE CES Q 195 nC gc t 63 ns d(on) Resistive Load, T = 25C J M4 screws (4x) supplied t 68 ns r I = 80A, V = 15V C GE t 290 ns d(off) V = 400V, R = 1 CE G t 740 ns f t 62 ns d(on) Resistive Load, T = 125C J t 77 ns r I = 80A, V = 15V C GE t 330 ns d(off) V = 400V, R = 1 CE G t 1540 ns f R 0.17 C/W thJC R 0.05 C/W thCK Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537