Advance Technical Data TM V = 600 V IXGN 60N60C2 HiPerFAST CES IXGN60N60C2D1 I = 75 A IGBT with Diode C25 V = 2.5 V CE(sat) C2-Class High Speed IGBTs t = 35 ns fi(typ) D1 E E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E c V T = 25C to 150C 600 V CES J G V T = 25C to 150C R = 1 MW 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E c I T = 25C (limited by leads) 100 A C C25 C I T = 110C 60 A C110 C I T = 25C, 1 ms 300 A G = Gate, C = Collector, E = Emitter CM C c either emitter terminal can be used as Main or Kelvin Emitter SSOA V = 15 V, T = 125C, R = 10 W I = 100 A GE VJ G CM (RBSOA) Clamped inductive load V 600 V CE Features z International standard package P T = 25C 480 W C C miniBLOC z Aluminium nitride isolation T -55 ... +150 C J - high power dissipation T 150 C z JM Isolation voltage 3000 V~ z T -55 ... +150 C Very high current IGBT stg z Low V for minimum on-state CE(sat) V 50/60 Hz t = 1 min 2500 V~ ISOL conduction losses I 1 mA t = 1 s 3000 V~ z ISOL MOS Gate turn-on - drive simplicity M Mounting torque 1.15/13 Nm/lb.in. z d Low collector-to-case capacitance Terminal connection torque (M4) 1.5/13 Nm/lb.in. (< 50 pF) z Low package inductance (< 5 nH) Weight 30 g - easy to drive and to protect Applications Symbol Test Conditions Characteristic Values z AC motor speed control (T = 25C, unless otherwise specified) z J DC servo and robot drives Min. Typ. Max. z DC choppers z Uninterruptible power supplies (UPS) V I = 250 mA, V = V 3.0 5.0 V GE(th) C CE GE z Switch-mode and resonant-mode power supplies I V = V T = 25C 650 mA CES CE CES J V = 0 V T = 125C 5 mA GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE z Easy to mount with 2 screws z Space savings V I = 50 A, V = 15 V T = 25C 2.1 2.5 V CE(sat) C GE J z High power density Note 1 T = 125C 1.8 V J 2004 IXYS All rights reserved DS990177(06/04)IXGN 60N60C2 IXGN 60N60C2D1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (T = 25C, unless otherwise specified) J Min. Typ. Max. g I = 50 A V = 10 V, 40 58 S fs C CE Note 1 C 3900 pF ies C V = 25 V, V = 0 V, f = 1 MHz 280 pF oes CE GE C 97 pF res Q 146 nC g Q I = 50 A, V = 15 V, V = 0.5 V 28 nC ge C GE CE CES Q 50 nC gc t 18 ns d(on) Inductive load, T = 25C t 25 ns J ri I = 50 A, V = 15 V t 95 150 ns C GE d(off) V = 400 V, R = R = 2.0 t 35 ns CE G off fi E 0.48 0.8 mJ off t 18 ns d(on) t 25 ns ri Inductive load, T = 125C J E 0.9 mJ on I = 50 A, V = 15 V C GE t 130 ns d(off) V = 400 V, R = R = 2.0 CE G off t 80 ns fi E 1.2 mJ off R 0.26 K/W thJC R 0.05 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 60 A, V = 0 V, 2.1 V F F GE Note 1 T = 150C 1.4 J I I = 60 A, V = 0 V, -di /dt = 100 A/ T = 100C 8.3 A RM F GE F J V = 100 V R t I = 1 A -di/dt = 200 A/ms V = 30 V 35 ns rr F R R 0.85 K/W thJC Note 1: Pulse test, t 300 ms, duty cycle 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344