Preliminary Technical Information TM V = 600V IXGN72N60A3 GenX3 600V IGBT CES I = 68A C110 V 1.35V CE(sat) Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 600 V CES J E c V T = 25C to 150C, R = 1M 600 V G CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip capability) 160 A E c C25 C I T = 110C 68 A C C110 C I Terminal Current Limit 100 A LRMS G = Gate, C = Collector, E = Emitter I T = 25C, 1ms 400 A CM C c Either emitter terminal can be used as SSOA V = 15V, T = 125C, R = 3 I = 150 A GE VJ G CM Main or Kelvin Emitter (RBSOA) Clamped inductive load 0.8 V CES P T = 25C 360 W C C T -55 ... +150 C Features J T 150 C JM z Optimized for low conduction losses T -55 ... +150 C stg z Isolation voltage 3000 V~ V 50/60Hz t = 1min 2500 V~ z ISOL Square RBSOA I 1mA t = 1s 3000 V~ ISOL z International standard package M Mounting torque 1.5/13 Nm/lb.in. d Terminal connection torque (M4) 1.3/11.5 Nm/lb.in. Advantages Weight 30 g z High power density z Low gate drive requirement Applications z Symbol Test Conditions Characteristic Values Power Inverters (T = 25C, unless otherwise specified) Min. Typ. Max. z J UPS z Motor Drives BV I = 250A, V = 0V 600 V CES C GE z SMPS V I = 250A, V = V 3.0 5.0 V z GE(th) C CE GE PFC Circuits z Battery Chargers I V = V 75 A CES CE CES z Welding Machines V = 0V T = 125C 750 A GE J z Lamp Ballasts I V = 0V, V = 20V 100 nA z GES CE GE Inrush Current Protection Circuits V I = 60A, V = 15V, Note 1 1.35 V CE(sat) C GE 2008 IXYS CORPORATION, All rights reserved DS99607A(11/08)IXGN72N60A3 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXGN) (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 48 76 S fs C CE C 6600 pF ies C V = 25V, V = 0V, f = 1MHz 360 pF oes CE GE C 80 pF res Q 230 nC g(on) Q I = 60A, V = 15V, V = 0.5 V 40 nC ge C GE CE CES Q 78 nC gc t 31 ns d(on) t 34 ns Inductive load, T = 25C ri J E 1.38 mJ on I = 50A, V = 15V C GE t 320 ns d(off) V = 480V, R = 3 CE G t 250 ns fi E 3.5 mJ off t 29 ns d(on) t 32 ns ri Inductive load, T = 125C J E 2.6 mJ on I = 50A, V = 15V C GE t 510 ns d(off) V = 480V, R = 3 CE G t 375 ns fi E 6.5 mJ off R 0.35 C/W thJC R 0.05 C/W thCK Note: 1. Pulse test, t 300 s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537