V I V CES C25 CE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V CES J V T = 25 C to 150 C R = 1 M 1000 V CGR J GE G C E V Continuous 20 V GES V Transient 30 V GEM TO-263 AA (IXGA) I T = 25 C24A C25 C I T = 90 C12A C90 C I T = 25 C, 1 ms 48 A CM C G SSOA V = 15 V, T = 125 C, R = 150 I = 24 A GE VJ G CM E C (TAB) (RBSOA) Clamped inductive load, L = 300 H 0.8 V CES P T = 25 C 100 W C C T -55 ... +150 C J Features T 150 C JM International standard packages T -55 ... +150 C stg JEDEC TO-220AB and TO-263AA IGBT with antiparallel FRED in one M Mounting torque with screw M3 0.45/4 Nm/lb.in. d package Mounting torque with screw M3.5 0.55/5 Nm/lb.in. TM Second generation HDMOS process Weight 4g Low V CE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol Test Conditions Characteristic Values Applications (T = 25 C, unless otherwise specified) Min. Typ. Max. AC motor speed control J DC servo and robot drives BV I = 3 mA, V = 0 V 1000 V DC choppers CES C GE Uninterruptible power supplies (UPS) V I = 250 A, V = V 2.5 5.5 V GE(th) C GE GE Switch-mode and resonant-mode power supplies I V = 0.8, V T = 25 C 300 A CES CE CES J V = 0 V T = 125 C3mA GE J Advantages Easy to mount with one screw I V = 0 V, V = 20 V 100 nA GES CE GE Space savings (two devices in one package) V I = I , V = 15 12N100 3.5 V CE(sat) C CE90 GE Reduces assembly time and cost 12N100A 4.0 V High power density IXYS reserves the right to change limits, test conditions, and dimensions. 95592A (3/97) 2000 IXYS All rights reserved 1 - 4IXGA12N100U1 IXGP12N100U1 IXGA12N100AU1 IXGP12N100AU1 Symbol Test Conditions Characteristic Values TO-220 AB (IXGP) Outline (T = 25 C, unless otherwise specified) Min. Typ. Max. J g I = I V = 10 V, 6 10 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % Q 65 90 nC g Q I = I , V = 15 V, V = 0.5 V 820 nC ge C C90 GE CE CES Q 24 45 nC gc t 100 ns Inductive load, T = 25 C d(on) J t 200 ns ri I = I , V = 15 V, L = 300 H C C90 GE t 850 1000 ns V = 800 V, R = R = 120 d(off) CE G off t 12N100A 500 700 ns fi Remarks: Switching times may 12N100 800 1000 ns increase for V (Clamp) > 0.8 V , CE CES Dim. Millimeter Inches E 12N100A 4 6 mJ off higher T or increased R J G Min. Max. Min. Max. A 12.70 13.97 0.500 0.550 t 100 ns d(on) B 14.73 16.00 0.580 0.630 Inductive load, T = 125 C J t 200 ns ri C 9.91 10.66 0.390 0.420 I = I , V = 15 V, L = 300 H C C90 GE D 3.54 4.08 0.139 0.161 E 1.1 mJ on V = 800 V, R = R = 120 E 5.85 6.85 0.230 0.270 CE G off t 900 ns d(off) F 2.54 3.18 0.100 0.125 Remarks: Switching times may t 12N100A 950 ns G 1.15 1.65 0.045 0.065 fi increase for V (Clamp) > 0.8 V , H 2.79 5.84 0.110 0.230 CE CES 12N100 1250 ns J 0.64 1.01 0.025 0.040 higher T or increased R J G E 12N100A 8 mJ K 2.54 BSC 0.100 BSC off M 4.32 4.82 0.170 0.190 12N100 10 mJ N 1.14 1.39 0.045 0.055 Q 0.35 0.56 0.014 0.022 R 1.25 K/W thJC R 2.29 2.79 0.090 0.110 R 0.25 K/W thCK TO-263 AA (IXGA) Outline Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. V I =8A, V = 0 V, 2.75 V F F GE Pulse test, t 300 s, duty cycle d 2 % I I = I , V = 0 V, -di /dt = 100 A/ s 6.5 A RM F C90 GE F t V = 100 V, T = 125 C 140 ns rr R J I = 1 A, -di/dt = 50 A/ s, V = 30 V T = 25 C50 60 ns F R J R 2.5 K/W thJC Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 Min. Recommended Footprint c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025