TM HiPerFAST IGBTs V = 600V IXGA16N60C2D1 CES C2-Class High Speed I = 16A IXGP16N60C2D1 C110 w/ Diode V 3.0V CE(sat) IXGH16N60C2D1 t = 33ns fi(typ) TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C C (Tab) I T = 25C40 A C25 C E I T = 110C16 A C110 C I T = 110C11 A TO-247 (IXGH) F110 C I T = 25C, 1ms 100 A CM C SSOA V = 15V, T = 125C, R = 22 I = 32 A GE J G CM (RBSOA) Clamped Inductive load V V CE CES P T = 25C 150 W C C G DC C (Tab) T -55 ... +150 C ES J T 150 C JM G = Gate C = Collector T -55 ... +150 C stg E = Emitter Tab = Collector M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C Features T Maximum Lead Temperature for Soldering 300 C L z T 1.6mm (0.062 in.) from Case for 10s 260 C Optimized for Low Switching Losses SOLD z Square RBSOA Weight TO-263 2.5 g z Anti-Parallel Ultra Fast Diode TO-220 3.0 g z International Standard Packages TO-247 6.0 g Advantages z High Power Density Symbol Test Conditions Characteristic Values z Low Gate Drive Requirement (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250A, V = V 3.0 5.5 V Applications GE(th) C CE GE I V = V , V = 0V 25 A CES CE CES GE z Power Inverters T = 125C 1 mA z J UPS z Motor Drives I V = 0V, V = 20V 100 nA GES CE GE z SMPS V I = 12A, V = 15V, Note1 3.0 V z CE(sat) C GE PFC Circuits T = 125C 1.8 V z Battery Chargers J z Welding Machines z Lamp Ballasts 2010 IXYS CORPORATION, All Rights Reserved DS99179B(08/10)IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 12A, V = 10V, Note 1 8 S fs C CE C 657 pF ies C V = 25V, V = 0V, f = 1MHz 72 pF oes CE GE C 22 pF res Q 25 nC g(on) Q I = 12A, V = 15V, V = 0.5 V 5 nC ge C GE CE CES Q 13 nC gc t 16 ns d(on) Inductive load, T = 25C J t 17 ns ri I = 12A, V = 15V E 0.16 mJ C GE on t 75 ns V = 400V, R = 22 d(off) CE G t 33 ns fi Note 2 E 0.09 0.16 mJ off t 16 ns d(on) Inductive load, T = 125C J t 18 ns ri E I = 12A, V = 15V 0.27 mJ on C GE t V = 400V, R = 22 115 ns d(off) CE G t 100 ns fi Note 2 E 0.27 mJ off R 0.83 C/W thJC R TO-220 0.50 C/W thCK TO-247 0.21 C/W Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 3.0 V F F GE T = 125C 1.7 V J I 2.5 A RM I = 12A, V = 0V, F GE -di /dt = 100A/s, V = 100V, T = 125C F R J t 110 ns rr t 30 ns I = 1A, V = 0V, -di /dt = 100A/s, V = 30V rr F GE F R R 2.5 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537