Preliminary Technical Information TM V = 1200V GenX3 1200V IGBT IXGA24N120C3 CES I = 48A IXGH24N120C3 C25 V 4.2V IXGP24N120C3 CE(sat) High speed PT IGBTs for t = 110ns fi(typ) 10-50kHz Switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G E V Continuous 20 V C (TAB) GES V Transient 30 V GEM I T = 25C48 A TO-247 (IXGH) C25 C I T = 100C24 A C100 C I T = 25C, 1ms 96 A CM C I T = 25C 20 A A C E T = 25C 250 mJ AS C G C (TAB) SSOA V = 15V, T = 125C, R = 5 I = 48 A C GE J G CM E (RBSOA) Clamped inductive load V 1200V CE P T = 25C 250 W C C TO-220 (IXGP) T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg M Mounting torque 1.13/10 Nm/lb.in. d C (TAB) G T Maximum lead temperature for soldering 300 C C L E T 1.6mm (0.062 in.) from case for 10s 260 C SOLD Weight TO-263 2.5 g G = Gate C = Collector TO-247 6.0 g E = Emitter TAB = Collector TO-220 3.0 g Features Symbol Test Conditions Characteristic Values z International standard packages: (T = 25C, unless otherwise specified) Min. Typ. Max. J JEDEC TO-247AD z BV I = 250A, V = 0V 1200 V MOS Gate turn-on CES C GE V I = 250A, V = V 2.5 5.0 V - drive simplicity GE(th) C CE GE z Avalanche rated I V = V 100 A CES CE CES V = 0V T = 125C 1.5 mA Applications GE J z I V = 0V, V = 20V 100 nA AC motor speed control GES CE GE z DC servo and robot drives V I = 20A, V = 15V, Note 2 3.6 4.2 V CE(sat) C GE z DC choppers T = 125C 3.1 V J z Uninterruptible power supplies (UPS) z Switch-mode and resonant-mode power supplies 2008 IXYS CORPORATION, All rights reserved DS99851A(01/08)IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) AD Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 2 10 17 S fs C CE C 1900 pF ies C V = 25V, V = 0V, f = 1MHz 125 pF oes CE GE C 52 pF res Q 79 nC g Q I = 24A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 36 nC gc t 16 ns d(on) Inductive load, T = 25C t 27 ns J ri I = 20A, V = 15V E 1.16 mJ C GE on 1 = Gate t V = 600V, R = 5 93 ns d(off) CE G 2 = Collector Note 1 t 110 ns 3 = Emitter fi Tab = Collector E 0.47 0.85 mJ off t 16 ns d(on) Inductive load, T = 125C J t 35 ns ri E I = 20A, V = 15V 2.18 mJ on C GE t V = 600V, R = 5 125 ns d(off) CE G Note 1 t 305 ns fi E 1.18 2.00 mJ off R 0.50 C/W thJC R TO-220 0.50 C/W thCK TO-247 0.21 C/W TO-220 (IXGP) Outline (Clamp) > 0.8 V , Notes: 1. Switching times may increase for V CE CES higher T or increased R . J G 2. Pulse test, t 300s duty cycle, d 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537