TM GenX3 600V V = 600V IXGA30N60C3 CES IGBTs I = 30A IXGP30N60C3 C110 V 3.0V IXGH30N60C3 CE(sat) t = 47ns fi(typ) High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E C (Tab) V T = 25C to 150C 600 V CES C V T = 25C to 150C, R = 1M 600 V TO-220AB (IXGP) CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 60 A C25 C G I T = 110C 30 A C110 C C C (Tab) E I T = 25C, 1ms 150 A CM C TO-247 (IXGH) SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V CES P T = 25C 220 W C C G T -55 ... +150 C J C E C (Tab) T 150 C JM T -55 ... +150 C stg G = Gate D = Collector S = Emitter Tab = Collector T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Features M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d Weight TO-220 2.5 g Optimized for Low Switching Losses TO-263 3.0 g Square RBSOA TO-263 3.0 g International Standard Packages Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Low Gate Drive Requirement BV I = 250A, V = 0V 600 V CES C GE Applications V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE High Frequency Power Inverters I V = V , V = 0V 15 A CES CE CES GE UPS T = 125C 300 A J Motor Drives I V = 0V, V = 20V 100 nA SMPS GES CE GE PFC Circuits V I = 20A, V = 15V, Note 1 2.6 3.0 V CE(sat) C GE Battery Chargers T = 125C 1.8 V J Welding Machines Lamp Ballasts 2011 IXYS CORPORATION, All Rights Reserved DS100012B(05/11) IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 9 16 S fs C CE C 915 pF ies C V = 25V, V = 0V, f = 1MHz 78 pF oes CE GE C 32 pF res Q 38 nC g Q I = 20A, V = 15V, V = 0.5 V 8 nC ge C GE CE CES 1 = Gate Q 17 nC 2 = Collector gc 3 = Emitter t 16 ns 4 = Collector d(on) Inductive Load, T = 25C J t 26 ns ri I = 20A, V = 15V C GE E 0.27 mJ on V = 300V, R = 5 t 42 75 ns CE G d(off) Note 2 t 47 ns fi E 0.09 0.18 mJ off t 17 ns d(on) Inductive Load, T = 125C J t 28 ns ri I = 20A, V = 15V C GE E 0.44 mJ on V = 300V, R = 5 CE G t 70 ns d(off) Note 2 t 90 ns fi E 0.33 mJ off R 0.56 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W TO-220 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G Dim. Millimeter Inches TO-247 Outline Min. Max. Min. Max. A 4.7 5.3 .185 .209 1 = Gate 2 = Collector A 2.2 2.54 .087 .102 1 Pins: 1 - Gate 2 - Drain 3 = Emitter A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 P b 2.87 3.12 .113 .123 1 2 3 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 e Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Terminals: 1 - Gate 2 - Collector 3 - Emitter S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537