TM V = 600 V HiPerFAST IGBT IXGA 7N60B CES I = 14 A IXGP 7N60B C25 V = 2 V CE(sat) t = 150 ns fi Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE G C E V Continuous 20 V GES V Transient 30 V GEM TO-263 AA (IXGA) I T = 25C 14 A C25 C I T = 90C 7 A C90 C I T = 25C, 1 ms 30 A CM C G C (TAB) E SSOA V = 15 V, T = 125C, R = 22 I = 14 A GE VJ G CM (RBSOA) Clamped inductive load, L = 300 H 0.8 V CES P T = 25C 54 W C C G = Gate, C = Collector, T -55 ... +150 C J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Maximum lead temperature for soldering 300 C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages M Mounting torque, (TO-220) 3 0.45/4 Nm/lb.in. JEDEC TO-263 surface d 3.5 0.55/5 mountable and JEDEC TO-220 AB Medium frequency IGBT Weight TO-220 4 g High current handling capability TO-263 2 g TM TM HiPerFAST HDMOS process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values Uninterruptible power supplies (UPS) (T = 25C, unless otherwise specified) J Switched-mode and resonant-mode min. typ. max. power supplies AC motor speed control BV I = 250 A, V = 0 V 600 V CES C GE DC servo and robot drives V I = 250 A, V = V 2.5 5.5 V GE(th) C CE GE DC choppers I V = 0.8 V T = 25C 100 A CES CE CES J Advantages V = 0 V T = 125C 500 A GE J High power density I V = 0 V, V = 20 V 100 nA Suitable for surface mounting GES CE GE Very low switching losses for high V I = I , V = 15 V 1.8 2.0 V CE(sat) C C90 GE frequency applications 2002 IXYS All rights reserved 98563A (06/02)IXGA 7N60B IXGP 7N60B Symbol Test Conditions Characteristic Values TO-220 AB Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 3 7 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 50 pF oes CE GE C 17 pF res Q 25 nC g Pins: 1 - Gate Q I = I , V = 15 V, V = 0.5 V 5nC 2 - Collector 3 - Emitter ge C C90 GE CE CES 4 - Collector Bottom Side Q 10 nC gc Dim. Millimeter Inches Min. Max. Min. Max. t 9ns d(on) Inductive load, T = 25C A 12.70 13.97 0.500 0.550 J B 14.73 16.00 0.580 0.630 t 10 ns ri I = I , V = 15 V, L = 300 H, C C90 GE C 9.91 10.66 0.390 0.420 E 0.07 mJ V = 0.8 V , R = R = 22 on D 3.54 4.08 0.139 0.161 CE CES G off E 5.85 6.85 0.230 0.270 t 100 200 ns Remarks: Switching times may d(off) F2.54 3.180.1000.125 increase for V (Clamp) > 0.8 V , t CE CES 150 250 ns G 1.15 1.65 0.045 0.065 fi higher T or increased R J G H 2.79 5.84 0.110 0.230 E 0.3 0.6 mJ off J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC t 10 ns d(on) Inductive load, T = 125C M 4.32 4.82 0.170 0.190 J N 1.14 1.39 0.045 0.055 t 15 ns ri I = I , V = 15 V, L = 300 H C C90 GE Q 0.35 0.56 0.014 0.022 E 0.15 mJ on R 2.29 2.79 0.090 0.110 V = 0.8 V , R = R = 22 CE CES G off t 200 ns d(off) Remarks: Switching times may TO-263 AA Outline t increase for V (Clamp) > 0.8 V , 250 ns fi CE CES higher T or increased R E J G 0.6 mJ off R 2.3 K/W thJC R (TO-220) 0.25 K/W thCK 1. Gate 2. Collector 3. Emitter 4. Collector Bottom Side Dim. Millimeter Inches Min. Recommended Footprint Min. Max. Min. Max. (Dimensions in inches and mm) A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025