High Voltage V = 1700V IXGR16N170AH1 CES IGBT w/ Sonic Diode I = 8A C90 V 5.0V CE(sat) t = 35ns fi(typ) (Electrically Isolated Tab) TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1700 V CES J V T = 25 C to 150 C, R = 1M 1700 V CGR J GE G V Continuous 20 V GES C Isolated Tab E V Transient 30 V GEM I T = 25 C16A C25 C G = Gate C = Collector I T = 90 C8A C90 C E = Emitter I T = 90 C15A F90 C I T = 25 C, 1ms 40 A CM C SSOA V = 15V, T = 125C, R = 10 I = 40 A GE VJ G CM Features (RBSOA) Clamped Inductive Load 0.8 V CES Silicon Chip on Direct-Copper Bond t V = 15V, V = 1200V, T = 125C 10 s sc GE CE J (DCB) Substrate (SCSOA) R = 22, Non Repetitive G Isolated Mounting Surface P T = 25 C 120 W C C 2500V~ Electrical Isolation T -55 ... +150 C Anti-Parallel Sonic Diode J International Standard Package T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T Plastic Body for 10s 260 C SOLD High Power Density V 50/60 Hz, 1 Minute 2500 V~ ISOL Low Gate Drive Requirement F Mounting Force 20..120/4.5..27 N/lb C Weight 5 g Applications Capacitor Discharge & Pulser Circuits Symbol Test Conditions Characteristic Values DC Choppers (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J UPS Switch-Mode and Resonant-Mode BV I = 250 A, V = 0V 1700 V CES C GE Power Supplies V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE DC Servo and Robot Drives AC Motor Drives I V = 0.8 V , V = 0V 100 A CES CE CES GE Robotics and Servo Controls Note 2, T = 125C 1.5 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 8A, V = 15V, Note 1 3.5 5.0 V CE(sat) C GE T = 125C 4.0 V J 2014 IXYS CORPORATION, All Rights Reserved DS99232B(04/14)IXGR16N170AH1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 16A, V = 10V, Note 1 6.0 12.5 S fs C CE C 1500 pF ies C V = 25V, V = 0V, f = 1MHz 110 pF oes CE GE C 33 pF res Q 70 nC g(on) Q I = 8A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Q 32 nC gc t 12 ns d(on) t Inductive load, T = 25C 22 ns ri J 1 - Gate = 16A, V = 15V E I 2.35 mJ C GE on 2 - Collector V = 0.5 V , R = 10 t 200 300 ns CE CES G 3 - Emitter d(off) t 35 150 ns Note 2 fi E 0.38 1.50 mJ off t 13 ns d(on) Inductive load, T = 125C t J 22 ns ri I = 16A, V = 15V E 2.80 mJ C GE on V = 0.5 V , R = 10 t 210 ns CE G CES d(off) t 88 ns Note 2 fi E 0.67 mJ off R 1.04 C/W thJC R 0.15 C/W thCS Reverse Sonic Diode (FRD) (T = 25C, Unless Otherwise Specified) Characteristic Values J Symbol Test Conditions Min. Typ. Max. V I = 20A, V = 0V, Note 1 3.4 V F F GE T = 125 C 2.8 J t 300 ns rr I = 10A, V = 0V, F GE 550 ns T = 125C J -di /dt = 250A/s, V = 900V I 13 A F R RM 15 A T = 125C J R 2.3 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 3. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537