Preliminary Technical Information TM V = 1200V GenX3 1200V IGBT IXGR24N120C3D1 CES I = 48A C25 V 4.2V CE(sat) High speed PT IGBTs for t = 110ns fi(typ) 20-50kHz Switching TM ISOPLUS 247 (IXGR) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C I T = 25C48 A ISOLATED TAB C25 C E I T = 100C24 A C100 C I T = 25C, 1ms 96 A CM C I T = 25C 20 A G = Gate C = Collector A C E = Emitter TAB = Collector E T = 25C 250 mJ AS C SSOA V = 15V, T = 125C, R = 5 I = 48 A GE J G CM (RBSOA) Clamped inductive load V 1200V CE Features P T = 25C 200 W C C DCB Isolated mounting tab T -55 ... +150 C J Meets TO-247AD package outline T 150 C JM High current handling capability T -55 ... +150 C stg TM Latest generation HDMOS process F Mounting force 20..120/4.5..27 N/lb. C MOS Gate turn-on T Maximum lead temperature for soldering 300 C L -drive simplicity T 1.6mm (0.062 in.) from case for 10s 260 C Avalanche Rated SOLD V 50/60 Hz RMS, t = 1min 2500 V ISOL I < 1mA, t = 20seconds 3000 V ISOL Applications Weight 5 g Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Symbol Test Conditions Characteristic Values DC choppers (T = 25C, unless otherwise specified) Min. Typ. Max. J AC motor speed control BV I = 250A, V = 0V 1200 V DC servo and robot drives CES C GE V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE I V = V 100 A CES CE CES Advantages V = 0V T = 125C 1.5 mA GE J Space savings I V = 0V, V = 20V 100 nA GES CE GE Easy assembly V I = 20A, V = 15V, Note 2 3.6 4.2 V CE(sat) C GE High power density T = 125C 3.1 V J Very fast switching speeds for high frequency applications 2008 IXYS CORPORATION, All rights reserved DS99946(02/08) IXGR24N120C3D1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 2 10 17 S fs C CE C 1620 pF ies C V = 25V, V = 0V, f = 1MHz 179 pF oes CE GE C 52 pF res Q 79 nC g Q I = 24A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 36 nC gc t 16 ns d(on) Inductive load, T = 25C t 26 ns J ri I = 20A, V = 15V E 1.37 mJ C GE on t V = 600V, R = 5 93 ns d(off) CE G Note 1 t 110 ns fi E 0.47 0.85 mJ off t 17 ns d(on) t 37 ns Inductive load, T = 125C ri J E 2.90 mJ on I = 20A, V = 15V C GE t 125 ns d(off) V = 600V, R = 5 CE G t 305 ns fi Note 1 E 1.18 2.00 mJ off R 1.00 C/W thJC R 0.15 C/W thCK Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J V I = 30A, V = 0V 2.75 V F F GE I = 30A, V = 0V T = 125C 1.80 V F GE J I I = 50A, -di /dt = 100A/s, V = 600V 5.5 11 A RM F F R t V = 0V, T = 100C 220 ns rr GE J R 1.5 C/W thJC Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , CE CES higher T or increased R . J G 2. Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537