TM
IXGR 24N60CD1 V = 600 V
HiPerFAST IGBT
CES
I =42 A
with Diode
C25
TM
V = 2.5 V
ISOPLUS247
CE(sat)
(Electrically Isolated Back Surface)
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
ISOPLUS 247
E153432
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
V Continuous 20 V
GES
V Transient 30 V
GEM
I T = 25C42A
C25 C
Isolated back surface*
I T = 90C22A
C90 C
I T = 25C, 1 ms 80 A
CM C
G = Gate, C = Collector
SSOA V = 15 V, T = 125C, R = 22 I = 48 A
E = Emitter
GE VJ G CM
(RBSOA) Clamped inductive load, L = 100 H @ 0.8 V
CES
* Patent pending
P T = 25C80W
C C
T -55 ... +150 C
J
T 150 C
Features
JM
!
Silicon chip on Direct-Copper-Bond
T -55 ... +150 C
stg
substrate
Maximum lead temperature for soldering 300 C
- High power dissipation
1.6 mm (0.062 in.) from case for 10 s
- Isolated mounting surface
- 2500V electrical isolation
V 2500 V
ISOL !
Low drain to tab capacitance(<35pF)
! TM
Low R HDMOS process
DS (on)
Weight TO-247 6 g
!
Rugged polysilicon gate cell structure
!
Unclamped Inductive Switching (UIS)
rated
!
Fast intrinsic rectifier
!
Low gate charge process
Symbol Test Conditions Characteristic Values
Applications
(T = 25C, unless otherwise specified)
J
!
DC-DC converters
min. typ. max.
!
Battery chargers
!
Switched-mode and resonant-mode
BV I = 750 A, V = 0 V 600 V
CES C GE
power supplies
V I = 250 A, V = V 2.5 5.5 V
GE(th) C GE GE
!
DC choppers
!
AC motor control
I V = 0.8 V T = 25C 200 A
CES CE CES J
V = 0 V T = 125C3mA
GE J
Advantages
!
I V = 0 V, V = 20 V 100 nA
Easy assembly
GES CE GE
!
Space savings
V I = I , V = 15 V 2.1 2.5 V
!
CE(sat) C T GE
High power density
1999 IXYS All rights reserved
98667 (11/99)IXGR 24N60CD1
Symbol Test Conditions Characteristic Values
ISOPLUS 247 OUTLINE
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = I ; V = 10 V, 9 17 S
fs C T CE
Pulse test, t 300 s, duty cycle 2 %
C 1500 pF
ies
C V = 25 V, V = 0 V, f = 1 MHz 170 pF
oes CE GE
C 40 pF
res
Q 55 nC
g
Q I = I , V = 15 V, V = 0.5 V 13 nC
ge C T GE CE CES
Q 17 nC
gc
t Inductive load, T = 25C 15 ns
d(on) J
1 Gate, 2 Drain (Collector)
t 25 ns
I = I , V = 15 V, L = 300 H
ri
C T GE 3 Source (Emitter)
V = 0.8 V , R = R = 18
4 no connection
t CE CES G off 75 140 ns
d(off)
Remarks: Switching times may increase
t 60 110 ns
fi
Dim. Millimeter Inches
for V (Clamp) > 0.8 V , higher T or
CE CES J
Min. Max. Min. Max.
E 0.24 0.36 mJ
off increased R
G
A 4.83 5.21 .190 .205
A 2.29 2.54 .090 .100
1
t 15 ns
d(on)
A 1.91 2.16 .075 .085
Inductive load, T = 125C
2
J
t 25 ns
b 1.14 1.40 .045 .055
ri
I = I , V = 15 V, L = 300 H
C T GE
b 1.91 2.13 .075 .084
1
E 1mJ
on
b 2.92 3.12 .115 .123
V = 0.8 V , R = R = 18 2
CE CES G off
C 0.61 0.80 .024 .031
t 130 ns
d(off)
Remarks: Switching times may increase
D 20.80 21.34 .819 .840
t 110 ns
E 15.75 16.13 .620 .635
for V (Clamp) > 0.8 V , higher T or
fi
CE CES J
e 5.45 BSC .215 BSC
increased R
E 0.6 mJ
G
off
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
R 0.157 K/W
thJC
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
R 0.15 K/W
thCK
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = I , V = 0 V, T = 150C 1.6 V
F F T GE J
Pulse test, t 300 s, duty cycle d 2 % T = 25C 2.5 V
J
I I = I , V = 0 V, -di /dt = 100 A/s6 A
RM F T GE F
t V = 100 V T = 100C 100 ns
rr R J
I = 1 A; -di/dt = 100 A/ s; V = 30 V T = 25C25 ns
F R J
R 1.65 K/W
thJC
Notes: 1. I = 24A
T
2. See IXGH24N60CD1 data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025