IXGR 32N170H1 V = 1700 V High Voltage CES I = 38 A C25 IGBT with Diode V = 3.5 V CE(sat) Electrically Isolated Tab t = 250 ns fi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM C ISOLATED TAB E I T = 25C38A C25 C G = Gate, C = Collector, I T = 90C20A C90 C E = Emitter I 14 A F90 I T = 25C, 1 ms 200 A CM C SSOA V = 15 V, T = 125C, R = 5 I = 70 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V CES Features t T = 125C, V = 1200 V V = 15 V, R = 10 10 s z SC J CE GE G Electrically Isolated tab z High current handling capability P T = 25C 200 W C C z MOS Gate turn-on T -55 ... +150 C - drive simplicity J z Rugged NPT structure T 150 C JM z Molding epoxies meet UL 94 V-0 T -55 ... +150 C stg flammability classification F Mounting force with clamp 22...130/5...30 N/lb C Applications V 50/60 Hz, 1 minute 2500 ~V z ISOL Capacitor discharge & pulser circuits z Maximum lead temperature for soldering 300 C AC motor speed control z 1.6 mm (0.062 in.) from case for 10 s DC servo and robot drives z Weight 5g DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. BV I = 1mA, V = 0 V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V 100 A CES CE CES V = 0 V, Note 1 T = 125C3mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = I , V = 15 V 2.6 3.5 V CE(sat) C T GE Notes 2, 3 T = 125C 3.1 V J DS99318(05/05) 2005 IXYS All rights reservedIXGR 32N170H1 Symbol Test Conditions Characteristic Values ISOPLUS247 Outline (T = 25C unless otherwise specified) J min. typ. max. g I = I V = 10 V, Note 2 22 30 S fs C T CE C 3670 pF ies C V = 25 V, V = 0 V, f = 1 MHz 210 pF oes CE GE C 41 pF res Q 155 nC g Q I = I V = 15 V, V = 0.5 V 28 nC ge C T GE CE CES Q 52 nC gc t Inductive load, T = 25C 45 ns d(on) J t 38 ns I = I , V = 15 V ri C T GE t 270 500 ns R = 2.7 , V = 0.8 V d(off) G CE CES Note 4 t 250 500 ns fi E 10.6 20 mJ off t 48 ns Inductive load, T = 125C d(on) J t 42 ns I = I , V = 15 V ri C T GE R = 2.7 , V = 0.8 V E 6.0 mJ G CE CES on Note 4 t 360 ns d(off) t 560 ns fi E 13.6 mJ off R 0.65 K/W thJC R 0.15 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 20A, V = 0 V, Note 2 2.85 V F F GE T = 150C 2.9 V J V For conduction power losses only 2.1 V TO r T = 150C40m FO J I I = 20A, V = 0 V, V = 1200 V 23 A RM F GE R -di /dt = 450 A/sT = 125C27 A F J t 230 ns rr T = 125C 400 ns J R 1.5 K/W thJC Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Test current I = 21 A. T 4. Switching times may increase for V (Clamp) > 0.8 V , higher T or CE CES J increased R . G 5. See IXGH32N170 datasheets for additional IGBT characteristics. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463