Advanced Technical Information IXGR35N120BD1 High Voltage IGBT V = 1200 V CES with Diode I =54 A C25 (Electrically Isolated Back Surface) V = 3.5 V CE(sat) t = 160 ns fi(typ) Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) V T = 25C to 150C 1200 V CES J V T = 25C to 150C R = 1 M 1200 V CGR J GE V Continuous 20 V GES (TAB) V Transient 30 V G GEM C E I T = 25C54A C25 C I T = 110C28A C110 C I T = 110C8A F110 C I T = 25C, 1 ms 200 A CM C G = Gate C = Collector E = Emitter TAB = Electrically SSOA V = 15 V, T = 125C, R = 10 I = 120 A GE J G CM Isolated (RBSOA) Clamped inductive load 0.8 V CES Features P T = 25C 250 W C C z Silicon chip on DCB substrate T -55 ... +150 C J - High power dissipation T 150 C JM - Isolated mounting surface T -55 ... +150 C - 2500V electrical isolation stg z IGBT and anti-parallel FRED for V 50/60 Hz, RMS, t = 1 min 2500 V~ ISOL resonant power supplies I = 1mA, t = 1 s 3000 V~ SOL - Induction heating - Rice cookers F Mounting force 22...130/5...29 N/lb C z MOS Gate turn-on Maximum lead temperature for soldering 300 C - drive simplicity 1.6 mm (0.062 in.) from case for 10 s z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I Weight 6 g RM Advantages Symbol Test Conditions Characteristic Values z Saves space (two devices in one (T = 25C, unless otherwise specified) min. typ. max. J package) V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE z Easy to mount I V = V T=25C50 A z CES CE CES Reduces assembly time and cost V = 0 V T=125C 250 A GE I V = 0 V, V = 20 V 100 nA GES CE GE V I = 35A, V = 15 V 2.8 3.5 V CE(sat) C GE Note 2 2004 IXYS All rights reserved DS99204(09/04)IXGR 35N120BD1 Symbol Test Conditions Characteristic Values ISOPLUS247 Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 35A V = 10 V, 28 38 S fs C CE Note 2. C 2300 pF ies C V = 25 V, V = 0 V, f = 1 MHz 190 pF oes CE GE C 80 pF res Q 140 nC g Q I = 40A, V = 15 V, V = 0.5 V 20 nC ge C GE CE CES Q 50 nC gc t 40 ns d(on) Inductive load, T = 25C J t 50 ns ri I = 35 A V = 15 V C GE E 0.9 mJ on V = 0.8 V R = R = 3 CE CES G off t 270 500 ns d(off) Note 1. t 160 300 ns fi E 3.8 7.0 mJ off t 45 ns d(on) Inductive load, T = 125C J t 60 ns ri I = 35A V = 15 V C GE E 1.9 mJ on V = 0.8 V R = R = 3 CE CES G off t 380 ns d(off) Note 1 t 400 ns fi E 8.0 mJ off R 0.5 K/W thJC R 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 10 A, V = 0 V 3.3 V F F GE I = 10 A, V = 0 V, T = 125C 2.2 V F GE J I I = 10 A -di /dt = 100 A/s, V = 100 V 4.0 A RM F F R t V = 0 V T = 125C 190 ns rr GE J t I = 1 A -di /dt = 100 A/s V = 30 V, V = 0 V 40 n s rr F F R GE R 2.5 K/W thJC Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , higher T CE CES J or increased R . G 2. Pulse test, t 300 s, duty cycle d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463