TM IXGR 60N60C2 V = 600 V HiPerFAST IGBT CES IXGR 60N60C2D1 TM I = 75 A ISOPLUS247 C25 V = 2.7 V TM CE(sat) Lightspeed 2 Series t = 35 ns fi(typ) (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR C2 IXGR C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 V T = 25C to 150C 600 V (IXGR) CES J V T = 25C to 150C R = 1 M 600 V CGR J GE C (ISOLATED TAB) V Continuous 20 V GES E V Transient 30 V GEM G = Gate C = Collector E = Emitter I T = 25C (limited by leads) 75 A C25 C I T = 110C 48 A C110 C Features I T = 110C (IXGR60N60C2D1) 39 A F110 C z I T = 25C, 1 ms 300 A DCB Isolated mounting tab CM C z Meets TO-247AD package Outline z SSOA V = 15 V, T = 125C, R = 10 I = 100 A High current handling capability GE VJ G CM TM z Latest generation HDMOS process (RBSOA) Clamped inductive load V 600 V CE z MOS Gate turn-on P T = 25C 250 W - drive simplicity C C T -55 ... +150 C J Applications T 150 C JM T -55 ... +150 C z Uninterruptible power supplies (UPS) stg z Switched-mode and resonant-mode V 50/60 Hz RMS, t = 1m 2500 V ISOL power supplies z AC motor speed control Weight 5g z DC servo and robot drives z DC choppers Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Advantages z Easy assembly Symbol Test Conditions Characteristic Values z High power density (T = 25C, unless otherwise specified) J z Very fast switching speeds for high Min. Typ. Max. frequency applications BV I = 1 mA, V = 0 V 600 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = V GR60N60C2 50 A CES CE CES V = 0 V GR60N60C2D1 650 A GE I V = 0 V, V = 20 V 100 nA GES CE GE V I = 50 A, V = 15 V T = 25C 2.3 2.7 V CE(sat) C GE J Note 1 T = 125C 2.0 V J 2004 IXYS All rights reserved DS99051D(05/04)IXGR 60N60C2 IXGR 60N60C2D1 Symbol Test Conditions Characteristic Values ISOPLUS 247 Outline (T = 25C, unless otherwise specified) J Min. Typ. Max. g I = 50 A V = 10 V, 40 55 S fs C CE Note 1 C 3900 pF ies C V = 25 V, V = 0 V, f = 1 MHz 60N60C2 280 pF oes CE GE 60N60C2D1 320 pF C 97 pF res Q 140 nC g Q I = 50 A, V = 15 V, V = 0.5 V 28 nC ge C GE CE CES Q 35 nC gc Inductive load, T = 25C t 18 ns J d(on) I = 50 A, V = 15 V t 25 ns C GE ri V = 400 V, R = R = 2.0 t 95 150 ns CE G off d(off) t 35 ns fi E 0.49 0.8 mJ off t 18 ns d(on) Inductive load, T = 125C J t 25 ns ri I = 50 A, V = 15 V C GE E 1.6 mJ on V = 400 V, R = R = 2.0 CE G off t 130 ns d(off) t 80 ns fi E 0.92 mJ off R (Note 2) 0.25 K/W thJ-DCB R (Note 3) 0.50 K/W thJC R 0.15 K/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 60 A, V = 0 V, 2.0 V F F GE Note 1 T = 150C 1.39 J I I = 60 A, V = 0 V, -di /dt = 100 A/ T = 100C 8.3 A RM F GE F J V = 100 V R t I = 1 A -di/dt = 200 A/ms V = 30 V 35 ns rr F R R 0.85 K/W thJC Note 1: Pulse test, t 300 s, duty cycle 2 % 2: R is the thermal resistance junction-to-internal side of DCB substrate thJ-DCB 3: R is the thermal resistance junction-to-external side of DCB substrate thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344