TM GenX3 600V IGBT V = 600V IXGR72N60C3D1 CES I = 35A with Diode C110 V 2.7V CE(sat) High-Speed Low-Vsat PT IGBT t = 55ns fi(typ) 40-100 kHz Switching TM Symbol Test Conditions Maximum Ratings ISOPLUS 247 V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM C Isolated Tab E I T = 25C (Limited by Leads) 75 A C25 C I T = 110C35A C110 C G = Gate C = Collector I T = 110C36A E = Emitter F110 C I T = 25C, 1ms 400 A CM C I T = 25C50A A C Features E T = 25C 500 mJ AS C z SSOA V = 15V, T = 125C, R = 2 I = 150 A Silicon Chip on Direct-Copper Bond GE VJ G CM (DCB) Substrate (RBSOA) Clamped Inductive Load V V CE CES z Optimized for Low Switching Losses P T = 25C 200 W z C C Square RBSOA z Isolated Mounting Surface T -55 ... +150 C J z Anti-Parallel Ultra Fast Diode T 150 C JM z Avalanche Rated T -55 ... +150 C stg z 2500V Electrical Isolation V 50/60 Hz, RMS, t = 1Minute 2500 V~ ISOL I < 1mA t = 20 Seconds 3000 V~ Advantages ISOL F Mounting Force 20..120/4.5..27 N/lb C z High Power Density z T Maximum Lead Temperature for Soldering 300 C Low Gate Drive Requirement L T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD Applications Weight 5 g z High Frequency Power Inverters z UPS z Motor Drives z SMPS z Symbol Test Conditions Characteristic Values PFC Circuits (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Battery Chargers z Welding Machines V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z Lamp Ballasts I V = V , V = 0V 300 A CES CE CES GE T = 125C 5 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 50A, V = 15V, Note 1 2.10 2.70 V CE(sat) C GE T = 125C 1.65 V J 2009 IXYS CORPORATION, All Rights Reserved DS100010A(11/09)IXGR72N60C3D1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 33 55 S fs C CE C 4780 pF ies C V = 25V, V = 0V, f = 1MHz 330 pF oes CE GE C 117 pF res Q 175 nC g Q I = 50A, V = 15V, V = 0.5 V 33 nC ge C GE CE CES Q 72 nC gc t 27 ns d(on) Inductive Load, T = 25C t J 37 ns ri E 1.03 mJ I = 50A, V = 15V on C GE t 77 130 ns d(off) V = 480V, R = 2, Note 2 CE G t 55 110 ns fi E 0.48 0.95 mJ off t 26 ns d(on) =1 25 Inductive Load, T C t 36 ns J ri E 1.48 mJ on I = 50A, V = 15V C GE t 120 ns d(off) V = 480V, R = 2, Note 2 t CE G 124 ns fi E 0.93 mJ off R 0.62 C/W thJC R 0.15 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.4 V J I = 60A, V = 0V, F GE I T = 100C 8.3 A RM J -di /dt = 100A/s, V = 100V F R t 35 ns I = 1A, -di/dt = 200A/s, V = 30V rr F R R 0.85 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537