IXGT16N170A V = 1700V High Voltage CES IXGH16N170A I = 11A IGBT w/ Sonic Diode C90 V 5.0V IXGT16N170AH1 CE(sat) t = 35ns fi(typ) IXGH16N170AH1 H1 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1700 V CES J V T = 25 C to 150 C, R = 1M 1700 V TO-268 (IXGT) CGR J GE V Continuous 20 V GES V Transient 30 V G GEM E I T = 25 C16A C25 C C (Tab) I T = 90 C11A C90 C I T = 90 C17A TO-247 (IXGH) F90 C I T = 25 C, 1ms 40 A CM C SSOA V = 15V, T = 125C, R = 10 I = 40 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES G t V = 15V, V = 1200V, T = 125C 10 s C sc GE CE J C (Tab) E (SCSOA) R = 22 , Non Repetitive G P T = 25 C 190 W C C G = Gate C = Collector T -55 ... +150 C E = Emiiter Tab = Collector J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L High Blocking Voltage T Plastic Body for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in d Low Conduction Losses Weight TO-268 4 g Anti-Parallel Sonic Diode TO-247 6 g High Blocking Voltage High Currect Handling Capability Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Low Gate Drive Requirement BV I = 250 A, V = 0V 1700 V CES C GE High Power Density V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Applications I V = 0.8 V , V = 0V 50 A 16N170A CES CE CES GE 100 A 16N170AH1 Switch-Mode and Resonant-Mode 750 A T = 125C Power Supplies 16N170A J 1.5 mA Uninterruptible Power Supplies (UPS) 16N170AH1 AC Choppers I V = 0V, V = 20V 100 nA GES CE GE Capacitor Discharge Circuits V I = 11A, V = 15V, Note 1 4.0 5.0 V AC Motor Drives CE(sat) C GE T = 125C 4.5 V J DC Servo & Robot Drives 2014 IXYS CORPORATION, All Rights Reserved DS99235C(04/14)IXGH/T16N170A IXGH/T16N170AH1 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 16A, V = 10V, Note 1 6.0 12.5 S fs C CE C 1500 pF ies C V = 25V, V = 0V, f = 1MHz 16N170A 99 pF oes CE GE 11016N170AH1 pF C 33 pF res Q 70 nC g(on) Q I = 11A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Terminals: 1 - Gate 2,4 - Collector 3 - Emitter Q 32 nC gc t 12 ns d(on) Inductive load, T = 25C J t 22 ns ri I = 16A, V = 15V C GE E 2.35 mJ on V = 0.5 V , R = 10 CE CES G t 200 300 ns d(off) Note 2 t 35 150 ns fi E 0.38 1.50 mJ off Inductive load, T = 125C t 13 ns J d(on) I = 16A, V = 15V t 22 ns C GE ri E V = 0.5 V , R = 10 2.80 mJ on CE CES G t 210 ns d(off) Note 2 t 88 ns fi E 0.67 mJ off TO-247 Outline R 0.65 C/W thJC R 0.21 C/W thCS P 1 2 3 Reverse Sonic Diode (FRD) (T = 25C, Unless Otherwise Specified) Characteristic Values J Symbol Test Conditions Min. Typ. Max. V I = 20A, V = 0V, Note 1 3.4 V e F F GE T = 125 C 2.8 J Terminals: 1 - Gate 2 - Collector 3 - Emitter t 300 ns rr I = 10A, V = 0V, Dim. Millimeter Inches F GE 550 ns T = 125C J Min. Max. Min. Max. -di /dt = 250A/s, V = 900V I 13 A F R RM A 4.7 5.3 .185 .209 15 A T = 125C A 2.2 2.54 .087 .102 J 1 A 2.2 2.6 .059 .098 2 R 1.5 C/W b 1.0 1.4 .040 .055 thJC b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 Notes: D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 1. Pulse test, t 300 s, duty cycle, d 2%. e 5.20 5.72 0.205 0.225 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537