Preliminary Technical Information IXGH25N250 V = 2500 V High Voltage IGBT CES IXGT25N250 I =60 A For Capacitor Discharge C25 Applications IXGV25N250S V 2.9 V CE(sat) TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 2500 V C CES J C (TAB) E V T = 25C to 150C R = 1 M 2500 V CGR J GE V Continuous 20 V TO-268 (IXGT) GES V Transient 30 V GEM I T = 25C 60 A C25 C G E I T = 110C 25 A C110 C C (TAB) I T = 25C, V = 20 V, 1 ms 200 A CM C GE SSOA V = 20 V, T = 125C, R = 20 I = 240 A GE J G CM PLUS220SMD (IXGV...S) (RBSOA) Clamped inductive load 1250V P T = 25C 250 W C C T -55 ... +150 C J G T 150 C E JM C (TAB) T -55 ... +150 C stg G = Gate, C = Collector, T 1.6 mm (0.062 in.) from case for 10 s 300 C L E = Emitter, TAB = Collector T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb-in Features d Weight TO-247 6 g High peak current capability TO-268 4 g Low saturation voltage MOS Gate turn-on -drive simplicity Symbol Test Conditions Characteristic Values Rugged NPT structure (T = 25C unless otherwise specified) J Molding epoxies meet UL 94 V-0 Min. Typ. Max. flammability classification BV I = 250 A, V = 0 V 2500 V CES C GE Applications V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Capacitor discharge I V = 0.8 V 50 A CES CE CES Pulser circuits V = 0 V T = 125C 1 mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE Advantages V I = 25 A, V = 15 V 2.9 V CE(sat) C GE High power density I = 75 A 5.2 V C Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) 2007 IXYS CORPORATION, All rights reserved DS99760 (04/07)IXGH25N250 IXGT25N250 IXGV25N250S Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C unless otherwise specified) J Min. Typ. Max. g I = 50 A V = 10 V, Note 1 16 26 S fs C CE P I V = 15V, V = 20V, Note 1 240 A 1 2 3 C(ON) GE CE C V = 25 V, V = 0 V, f = 1 MHz 2310 pF ies CE GE C 75 pF oes C 23 pF res Q I = 50 A, V = 15 V, V = 0.5 V 75 nC g C GE CE CES e Q 15 nC Terminals: 1 - Gate 2 - Drain (Collector) ge 3 - Source (Emitter) Tab - Drain (Collector) Q 30 nC gc Dim. Millimeter Inches Resistive load t 68 ns Min. Max. Min. Max. d(on) A 4.7 5.3 .185 .209 t I = 50 A, V = 15 V, Note 1 233 ns ri C GE A 2.2 2.54 .087 .102 1 V = 1250 V, R = 5 A 2.2 2.6 .059 .098 CE G t 209 ns 2 d(off) b 1.0 1.4 .040 .055 t 200 ns b 1.65 2.13 .065 .084 fi 1 b 2.87 3.12 .113 .123 2 R 0.5 C/W thJC C .4 .8 .016 .031 D 20.80 21.46 .819 .845 R (TO-247) 0.25 C/W thCS E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Notes: 1. Pulse test, t 300 s, duty cycle, d 2 % L 19.81 20.32 .780 .800 L1 4.50 .177 2. Additional provisions for lead-to-lead voltage P 3.55 3.65 .140 .144 isolation are required at V > 1200 V CE Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 PLUS220SMD (IXGV S) Outline S 6.15 BSC 242 BSC TO-268 (IXGT) Outline (D3-Pak) PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Ref: IXYS CO 0052 RA IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537