X-On Electronics has gained recognition as a prominent supplier of IXGT2N250 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGT2N250 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGT2N250 IXYS

IXGT2N250 electronic component of IXYS
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Part No.IXGT2N250
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors Disc IGBT NPT-Very Hi Voltage TO-268AA
Datasheet: IXGT2N250 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 68.2161 ea
Line Total: USD 68.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 68.2161
10 : USD 64.0943
30 : USD 62.0231
120 : USD 56.555
270 : USD 54.6081

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXGT2N250 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGT2N250 and other electronic components in the IGBT Transistors category and beyond.

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Advance Technical Information High Voltage IGBTs V = 2500V IXGH2N250 CES IXGT2N250 I = 2A C110 for Capacitor Discharge V 3.1V CE(sat) Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) V T = 25C to 150C 2500 V CES C C E V T = 25C to 150C, R = 1M 2500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM TO-268 (IXGT) I T = 25C 5.5 A C25 C I T = 110C 2.0 A C110 C I T = 25C, 1ms 13.5 A CM C SSOA V = 15V, T = 125C, R = 50 I = 6 A G GE VJ G CM E (RBSOA) Clamped Inductive Load V 2000 V C (TAB) CE P T = 25C 32 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Weight TO-247 6 g Optimized for Low Conduction and Switching Losses TO-268 4 g z International Standard Packages Advantages Symbol Test Conditions Characteristic Values z High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Low Gate Drive Requirement BV I = 250A, V = 0V 2500 V CES C GE V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE Applications I V = 0.8 V , V = 0V 10 A CES CE CES GE T = 125C 100 A J z Switched-Mode and Resonant-Mode I V = 0V, V = 20V 100 nA Power Supplies GES CE GE z Uninterruptible Power Supplies (UPS) V I = I , V = 15V, Note 1 2.6 3.1 V CE(sat) C C110 GE z Capacitor Discharge Circuits T = 125C 3.1 V J 2009 IXYS CORPORATION, All Rights Reserved DS100162(06/09) IXGH2N250 IXGT2N250 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 0.7 1.2 S fs C C110 CE C 144 pF ies C V = 25V, V = 0V, f = 1MHz 8.7 pF P oes CE GE 1 2 3 C 3.2 pF res Q 10.5 nC g Q I = I , V = 15V, V = 1000V 6.4 nC ge C C110 GE CE Q 1.0 nC gc t 22 ns d(on) Resistive Switching times, T = 25C e J t 74 ns r Terminals: 1 - Gate 2 - Drain I = I , V = 15V C C110 GE 3 - Source Tab - Drain t 70 ns d(off) V = 1800V, R = 50 Dim. Millimeter Inches CE G t 100 ns Min. Max. Min. Max. f A 4.7 5.3 .185 .209 t 26 ns d(on) Resistive Switching times, T = 125C A 2.2 2.54 .087 .102 J 1 t 89 ns A 2.2 2.6 .059 .098 r 2 I = I , V = 15V C C110 GE b 1.0 1.4 .040 .055 t 74 ns d(off) b 1.65 2.13 .065 .084 V = 1800V, R = 50 1 CE G t 204 ns b 2.87 3.12 .113 .123 2 f C .4 .8 .016 .031 R 3.9 C/W D 20.80 21.46 .819 .845 thJC E 15.75 16.26 .610 .640 R (TO-247) 0.21 C/W thCK e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Note 1. Pulse test, t 300 s duty cycle, d 2%. TO-268 (IXGT) Outline ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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