Advance Technical Information High Voltage IGBTs V = 2500V IXGH2N250 CES IXGT2N250 I = 2A C110 for Capacitor Discharge V 3.1V CE(sat) Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) V T = 25C to 150C 2500 V CES C C E V T = 25C to 150C, R = 1M 2500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM TO-268 (IXGT) I T = 25C 5.5 A C25 C I T = 110C 2.0 A C110 C I T = 25C, 1ms 13.5 A CM C SSOA V = 15V, T = 125C, R = 50 I = 6 A G GE VJ G CM E (RBSOA) Clamped Inductive Load V 2000 V C (TAB) CE P T = 25C 32 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Weight TO-247 6 g Optimized for Low Conduction and Switching Losses TO-268 4 g z International Standard Packages Advantages Symbol Test Conditions Characteristic Values z High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Low Gate Drive Requirement BV I = 250A, V = 0V 2500 V CES C GE V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE Applications I V = 0.8 V , V = 0V 10 A CES CE CES GE T = 125C 100 A J z Switched-Mode and Resonant-Mode I V = 0V, V = 20V 100 nA Power Supplies GES CE GE z Uninterruptible Power Supplies (UPS) V I = I , V = 15V, Note 1 2.6 3.1 V CE(sat) C C110 GE z Capacitor Discharge Circuits T = 125C 3.1 V J 2009 IXYS CORPORATION, All Rights Reserved DS100162(06/09) IXGH2N250 IXGT2N250 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 0.7 1.2 S fs C C110 CE C 144 pF ies C V = 25V, V = 0V, f = 1MHz 8.7 pF P oes CE GE 1 2 3 C 3.2 pF res Q 10.5 nC g Q I = I , V = 15V, V = 1000V 6.4 nC ge C C110 GE CE Q 1.0 nC gc t 22 ns d(on) Resistive Switching times, T = 25C e J t 74 ns r Terminals: 1 - Gate 2 - Drain I = I , V = 15V C C110 GE 3 - Source Tab - Drain t 70 ns d(off) V = 1800V, R = 50 Dim. Millimeter Inches CE G t 100 ns Min. Max. Min. Max. f A 4.7 5.3 .185 .209 t 26 ns d(on) Resistive Switching times, T = 125C A 2.2 2.54 .087 .102 J 1 t 89 ns A 2.2 2.6 .059 .098 r 2 I = I , V = 15V C C110 GE b 1.0 1.4 .040 .055 t 74 ns d(off) b 1.65 2.13 .065 .084 V = 1800V, R = 50 1 CE G t 204 ns b 2.87 3.12 .113 .123 2 f C .4 .8 .016 .031 R 3.9 C/W D 20.80 21.46 .819 .845 thJC E 15.75 16.26 .610 .640 R (TO-247) 0.21 C/W thCK e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Note 1. Pulse test, t 300 s duty cycle, d 2%. TO-268 (IXGT) Outline ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537