TM GenX3 1200V IGBT V = 1200V IXGH30N120B3D1 CES I = 30A IXGT30N120B3D1 C110 V 3.5V CE(sat) t = 204ns High speed Low Vsat PT fi(typ) IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G I T = 110C30A C C (TAB) C110 C E I T = 110C28A F110 C I T = 25C, 1ms 150 A CM C TO-268 (IXGT) SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V CE P T = 25C 300 W C C G T -55 ... +150 C E J C (TAB) T 150 C JM T -55 ... +150 C G = Gate C = Collector stg E = Emitter TAB = Collector M Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. d T Maximum lead temperature for soldering 300 C L T 1.6mm (0.062 in.) from case for 10s 260 C Features SOLD Weight TO-247 6 g z Optimized for low conduction and TO-268 4 g switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages Symbol Test Conditions Characteristic Values z High power density (T = 25C, unless otherwise specified) J z Low gate drive requirement Min. Typ. Max. V I = 250A, V = V 3.0 5.0 V Applications GE(th) C CE GE I V = V 300 A z CES CE CES Power Inverters V = 0V T = 125C 1.5 mA z GE J UPS z Motor Drives I V = 0V, V = 20V 100 nA GES CE GE z SMPS V I = 30A, V = 15V, Note 1 2.96 3.5 V z CE(sat) C GE PFC Circuits T = 125C 2.95 V z J Welding Machines 2008 IXYS CORPORATION, All rights reserved DS99566A(05/08) IXGH30N120B3D1 IXGT30N120B3D1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 11 19 S fs C CE C 1750 pF ies P C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 46 pF res Q 87 nC g Q I = 30A, V = 15V, V = 0.5 V 15 nC ge C GE CE CES Q 39 nC gc e Dim. Millimeter Inches t 16 ns d(on) Min. Max. Min. Max. t 37 ns A 4.7 5.3 .185 .209 Inductive load, T = 25C ri J A 2.2 2.54 .087 .102 1 E 3.47 mJ on I = 30A, V = 15V, Notes 2 A 2.2 2.6 .059 .098 C GE 2 t 127 200 ns b 1.0 1.4 .040 .055 d(off) V = 0.8 V , R = 5 CE CES G b 1.65 2.13 .065 .084 1 t 204 380 ns fi b 2.87 3.12 .113 .123 2 E 2.16 4.0 mJ C .4 .8 .016 .031 off D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 t 18 ns d(on) e 5.20 5.72 0.205 0.225 t 38 ns ri L 19.81 20.32 .780 .800 Inductive load, T = 125C J L1 4.50 .177 E 6.70 mJ on I = 30A,V = 15V, Notes 2 P 3.55 3.65 .140 .144 C GE t 216 ns d(off) Q 5.89 6.40 0.232 0.252 V = 0.8 V ,R = 5 CE CES G t 255 ns R 4.32 5.49 .170 .216 fi E 5.10 mJ off R 0.42 C/W TO-268 Outline thJC R 0.21 C/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. V 2.8 V I = 30A,V = 0V, Note 1 F F GE T = 150C 1.6 V J I 4 A I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C RM F GE F J V = 300V T = 100C t R 100 nsJ rr R 0.9 C/W thJC Note 1: Pulse test, t 300s, duty cycle, d 2%. 2. Switching times may increase for V (Clamp) > 0.8 V , CE CES higher T or increased R . J G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537