High Voltage IXGH 32N170 V = 1700 V CES IXGT 32N170 I = 75 A IGBT C25 V = 3.3 V CE(sat) t = 250 ns fi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE G V Continuous 20 V GES E C (TAB) V Transient 30 V GEM I T = 25C75A C25 C TO-247 AD (IXGH) I T = 90C32A C90 C I T = 25C, 1 ms 200 A CM C SSOA V = 15 V, T = 125C, R = 5 I = 90 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load 0.8 V G CES C E P T = 25C 350 W C C G = Gate, C = Collector, T -55 ... +150 C E = Emitter, TAB = Collector J Features T 150 C JM T -55 ... +150 C stg z International standard packages Maximum Lead temperature for soldering 300 C JEDEC TO-268 and 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 AD z Maximum Tab temperature for soldering SMD devices for 10 s 260 C High current handling capability z MOS Gate turn-on M Mounting torque (M3) 1.13/10Nm/lb.in. - drive simplicity d z Rugged NPT structure Weight TO-247 AD 6 g z Molding epoxies meet UL 94 V-0 TO-268 4 g flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control Symbol Test Conditions Characteristic Values z (T = 25C, unless otherwise specified) DC servo and robot drives J z min. typ. max. DC choppers z Uninterruptible power supplies (UPS) BV I = 250 A, V = 0 V 1700 V z CES C GE Switched-mode and resonant-mode V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE power supplies I V = 0.8 V T = 25C50 A CES CE CES J Advantages V = 0 V T = 125C1mA GE J z High power density I V = 0 V, V = 20 V 100 nA GES CE GE z Suitable for surface mounting z V I = I , V = 15 V T = 25C 2.5 3.3 V Easy to mount with 1 screw, CE(sat) C C90 GE J T = 125C 3.0 V (isolated mounting screw hole) J DS98941B(11/03) 2003 IXYS All rights reservedIXGH 32N170 IXGT 32N170 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 22 30 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % P I V = 10V, V = 10V 120 A C(ON) GE CE C 3500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 165 pF oes CE GE C 40 pF res e Q 155 nC g Dim. Millimeter Inches Q I = I , V = 15 V, V = 0.5 V 30 nC Min. Max. Min. Max. ge C C90 GE CE CES A 4.7 5.3 .185 .209 Q 51 nC gc A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 45 ns d(on) b 1.0 1.4 .040 .055 Inductive load, T = 25C J b 1.65 2.13 .065 .084 t 38 ns 1 ri I = I , V = 15 V b 2.87 3.12 .113 .123 C C90 GE 2 t 270 500 ns V = 0.6 V , R = R = 2.7 d(off) C .4 .8 .016 .031 CE CES G off D 20.80 21.46 .819 .845 t 250 500 ns fi E 15.75 16.26 .610 .640 E 11 20 mJ e 5.20 5.72 0.205 0.225 off L 19.81 20.32 .780 .800 L1 4.50 .177 t 48 ns d(on) P 3.55 3.65 .140 .144 Inductive load, T = 125C J t 42 ns Q 5.89 6.40 0.232 0.252 ri I = I , V = 15 V C C90 GE R 4.32 5.49 .170 .216 E 6.0 mJ on S 6.15 BSC 242 BSC V = 0.6 V , R = R = 2.7 CE CES G off t 360 ns d(off) t 560 ns fi TO-268 Outline E 14 mJ off R 0.35 K/W thJC R (TO-247) 0.25 K/W thCK Dim. Millimeter Inches Min. Max. Min. Max. Min Recommended Footprint A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505