TM V = 600V GenX3 600V IGBTs IXGH60N60C3D1 CES I = 60A with Diode IXGT60N60C3D1 C110 V 2.5V CE(sat) t = 50ns fi (typ) High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J G V T = 25C to 150C, R = 1M 600 V C C (Tab) CGR J GE E V Continuous 20 V GES V Transient 30 V GEM I T = 25C, (Limited by Leads) 75 A C25 C TO-268 (IXGT) I T = 110C 60 A C110 C I T = 110C 26 A F110 C I T = 25C, 1ms 300 A G CM C E I T = 25C 40 A A C C (Tab) E T = 25C 400 mJ AS C SSOA V = 15V, T = 125C, R = 3 I = 125 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load V V CE CES E = Emitter Tab = Collector P T = 25C 380 W C C Features T -55 ... +150 C J T 150 C JM z Optimized for Low Switching Losses T -55 ... +150 C stg z Square RBSOA T Maximum Lead Temperature for Soldering 300 C z L High Avalanche Capability T 1.6 mm (0.062in.) from Case for 10s 260 C z SOLD Anti-Parallel Ultra Fast Diode z International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-268 4 g TO-247 6 g Advantages z High Power Density Symbol Test Conditions Characteristic Values z Low Gate Drive Requirement (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE Applications I V = V V = 0V 50 A CES CE CES, GE T = 125C 1 mA J z High Frequency Power Inverters I V = 0V, V = 20V 100 nA z GES CE GE UPS z V I = 40A, V = 15V 2.2 2.5 V Motor Drives CE(sat) C GE z T = 125C 1.7 V SMPS J z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts 2010 IXYS CORPORATION, All Rights Reserved DS100009B(01/10)IXGH60N60C3D1 IXGT60N60C3D1 Symbol Test Conditions Characteristic Values TO-268 (IXGT) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 23 38 S fs C CE 2810 pF C ies C V = 25V, V = 0V, f = 1MHz 210 pF oes CE GE C 80 pF res Q 115 nC g Q I = 40A, V = 15V, V = 0.5 V 22 nC ge C GE CE CES Q 43 nC gc t 21 ns d(on) Inductive Load, T = 125C t 33 ns Terminals: 1 - Gate 2 - Collector J ri 3 - Emitter Tab - Collector E I = 40A, V = 15V 0.80 mJ on C GE t 70 110 ns V = 480V, R = 3 d(off) CE G t 50 ns fi Note 2 E 0.45 0.80 mJ off t 21 ns d(on) Inductive Load, T = 125C t 33 ns J ri E I = 40A, V = 15V 1.25 mJ on C GE t 112 ns V = 480V, R = 3 d(off) CE G t 86 ns fi Note 2 E 0.80 mJ off R 0.33 C/W thJC R 0.21 C/W thCK TO-247 (IXGH) Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. P J 1 2 3 V 2.7 V I = 30A, V = 0V, Note 1 F F GE T =150C 1.6 V J I T = 100C 4 A RM J I = 30A, V = 0V, di /dt =100 A/s, F GE F t T =100C 100 ns V = 100V rr J R 25 ns I = 1A -di/dt = 100 A/s, V = 30V e F R Terminals: 1 - Gate 2 - Collector R 0.9 C/W thJC 3 - Emitter Tab - Collector Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Notes: 1 A 2.2 2.6 .059 .098 1. Pulse test, t 300s, duty cycle, d 2%. 2 b 1.0 1.4 .040 .055 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537