V = 1700V High Voltage IXGT6N170 CES I = 6A IGBT IXGH6N170 C90 V 4.0V CE(sat) t = 290ns fi(typ) TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E V T = 25C to 150C 1700 V CES C C (Tab) V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES TO-247 (IXGH) V Transient 30 V GEM I T = 25C 12 A C25 C I T = 90C 6 A C90 C I T = 25C, 1ms 24 A CM C G C C (Tab) SSOA V = 15V, T = 125C, R = 33 I = 12 A E GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES G = Gate C = Collector P T = 25C 75 W C C E = Emitter Tab = Collector T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d High VoltagePackage Weight TO-268 4 g TO-247 6 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V Capacitor Discharge & Pulse Circuits GE(th) C CE GE Uninterruptible Power Supplies (UPS) I V = 0.8 V , V = 0V 10 A CES CE CES GE Motor Drives T = 125C 100 A J DC Servo & Robot Drives I V = 0V, V = 20V 100 nA DC Choppers GES CE GE Switched-Mode & Resonant-Mode V I = I , V = 15V, Note 1 3.0 4.0 V CE(sat) C C90 GE Power Supplies T = 125C 4.0 J 2015 IXYS CORPORATION, All Rights Reserved DS98989C(9/15)IXGH6N170 IXGT6N170 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 6A, V = 10V, Note 1 3.0 4.5 S fs C CE I V = 15V, V = 10V 28 A C(ON) GE CE C 330 pF ies C V = 25V, V = 0V, f = 1MHz 23 pF oes CE GE C 6 pF res Q 20.0 nC g Q I = 6A, V = 15V, V = 0.5 V 3.6 nC Terminals: 1 - Gate 2,4 - Collector ge C GE CE CES 3 - Emitter Q 8.0 nC gc t 40 ns d(on) Inductive load, T = 25C J t 36 ns ri I = 6A, V = 15V C GE t 250 500 ns d(off) V = 0.8 V , R = 33 CE CES G t 290 500 ns fi Note 2 E 1.5 2.5 mJ off t 45 ns d(on) Inductive load, T = 125C J t 40 ns ri I = 6A, V = 15V E C GE 0.5 mJ on V = 0.8 V , R = 33 t 300 ns CE CES G d(off) Note 2 t 300 ns fi E 2.0 mJ off R 1.65 C/W thJC TO-247 Outline R TO-247 0.21 C/W thCK P 1 2 3 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G e Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537