Advance Technical Information High Voltage V = 1700V IXGT6N170AHV CES I = 6A IGBT C25 V 7.0V CE(sat) t = 32ns fi(typ) TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 1700 V CES J G = Gate C = Collector V T = 25C to 150C, R = 1M 1700 V CGR J GE E = Emiiter Tab = Collector V Continuous 20 V GES V Transient 30 V GEM I T = 25C 6 A C25 C I T = 110C 3 A C110 C I T = 25C, 1ms 14 A CM C Features SSOA V = 15V, T = 125C, R = 33 I = 12 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V High Blocking Voltage CES High Voltage Package t V = 15V, V = 1200V, T = 125C 10 s sc GE CE J (SCSOA) R = 33, Non Repetitive G P T = 25C 75 W C C Advantages T -55 ... +150 C J T 150 C JM High Power Density T -55 ... +150 C Easy to Mount stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Weight 4 g Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 1700 V CES C GE PFC Circuits V I = 250 A, V = V 3.0 5.0 V Welding Machines GE(th) C CE GE I V = 0.8 V , V = 0V 10 A CES CE CES GE T = 125C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 3A, V = 15V, Note 1 7.0 V CE(sat) C GE T = 125C 5.4 V J 2013 IXYS CORPORATION, All Rights Reserved DS100476(01/13)IXGT6N170AHV Symbol Test Conditions Characteristic Values TO-268 (VHV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 6A, V = 20V, Note 1 2.0 3.5 S fs C CE C 390 pF ies C V = 25V, V = 0V, f = 1MHz 20 pF oes CE GE C 7 pF res PIN: Q 18.5 nC g(on) 1 - Gate 2 - Emitter Q I = 6A, V = 15V, V = 0.5 V 2.8 nC ge C GE CE CES 3 - Collector Q 8.2 nC gc t 46 ns d(on) Inductive load, T = 25C J t 40 ns ri I = 6A, V = 15V E C GE 0.59 mJ on V = 0.5 V , R = 33 t CE CES G 220 400 ns d(off) t Note 2 32 ns fi E 0.18 0.36 mJ off t 48 ns d(on) Inductive load, T = 125C t 43 ns J ri I = 6A, V = 15V E 0.62 mJ C GE on t V = 0.5 V , R = 33 230 ns d(off) CE CES G t 41 ns fi Note 2 E 0.25 mJ off R 1.65 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537