Preliminary Technical Information TM GenX3 A3-Class V = 1200V IXGK120N120A3 CES I = 120A IGBTs IXGX120N120A3 C110 V 2.20V CE(sat) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1200 V C CES J (TAB) E E V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES TM PLUS 247 (IXGX) V Transient 30 V GEM I T = 25C ( Chip Capability ) 240 A C25 C I T = 110C 120 A C110 C I Terminal Current Limit 75 A LRMS I T = 25C, 1ms 600 A CM C SSOA V = 15V, T = 125C, R = 1 I = 240 A G GE VJ G CM (TAB) C (RBSOA) Clamped Inductive Load 0.8 V E CES P T = 25C 830 W C C G = Gate E = Emitter T -55 ... +150 C J C = Collector TAB = Collector T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD z Optimized for Low Conduction Losses M Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. d z Square RBSOA F Mounting Force ( IXGX ) 20..120/4.5..27 N/lb. C z High Avalanche Capability Weight TO-264 10 g z International Standard Packages PLUS247 6 g Advantages z Symbol Test Conditions Characteristic Values High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Low Gate Drive Requirement BV I = 250A, V = 0V 1200 V CES C CE Applications V I = 1mA, V = V 3.0 5.0 V GE(th) C CE GE z I V = V V = 0V 50 A Power Inverters CES CE CES, GE z T = 125C 3 mA UPS J z Motor Drives I V = 0V, V = 20V 400 nA GES CE GE z SMPS V I = 100A, V = 15V, Note 1 1.85 2.20 V z CE(sat) C GE PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits 2009 IXYS CORPORATION, All Rights Reserved DS99977(02/09)IXGK120N120A3 IXGX120N120A3 Symbol Test Conditions Characteristic Values TO-264 (IXGK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 45 73 S fs C CE C 9900 pF ies C V = 25V, V = 0V, f = 1 MHz 655 pF oes CE GE C 240 pF res Q 420 nC g(on) Q I = I , V = 15V, V = 0.5 V 70 nC ge C C110 GE CE CES Q 180 nC gc t 40 ns d(on) t 67 ns ri Inductive load, T = 25C J E 10 mJ on I = 100A, V = 15V C GE t 490 ns d(off) V = 960V, R = 1 CE G t 325 ns fi Note 2 E 33 mJ off t 30 ns d(on) t Inductive load, T = 125C 75 ns J ri E 15 mJ I = 100A, V = 15V on C GE t 685 ns d(off) V = 960V, R = 1 CE G t 680 ns fi Note 2 E 58 mJ off R 0.15 C/W thJC R 0.15 C/W thCK TM PLUS 247 (IXGX) Outline Note 1: Pulse Test, t 300 s, Duty Cycle, d 2%. 2. Switching Times may Increase for V (Clamp) > 0.8 V , CE CES Higher T or Increased R . J G Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. Millimeter Inches Min. Max. Min. Max. PRELIMINARY TECHNICAL INFORMATION A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 The product presented herein is under development. The Technical Specifications offered are derived A 1.91 2.16 .075 .085 2 from data gathered during objective characterizations of preliminary engineering lots but also may yet b 1.14 1.40 .045 .055 contain some information supplied during a pre-production design evaluation. IXYS reserves the right b 1.91 2.13 .075 .084 1 to change limits, test conditions, and dimensions without notice. b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537