TM V = 600V GenX3 600V IXGK120N60B3 CES I = 120A IGBTs IXGX120N60B3 C110 V 1.8V CE(sat) t = 145ns fi(typ) Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V CES J C E V T = 25C to 150C, R = 1M 600 V CGR J GE Tab V Continuous 20 V GES V Transient 30 V TM GEM PLUS247 (IXGX) I T = 25C (Chip Capability) 280 A C25 C I T = 110C 120 A C110 C I Terminal Current Limit 160 A LRMS I T = 25C, 1ms 600 A CM C G C SSOA V = 15V, T = 125C, R = 2 I = 300 A Tab GE VJ G CM E (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 780 W C C T -55 ... +150 C G = Gate E = Emitter J C = Collector Tab = Collector T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD z Optimized for Low Conduction and Switching Losses M Mounting Torque (IXGK) 1.13/10 Nm/lb.in. d z Square RBSOA F Mounting Force (IXGX) 20..120/4.5..27 N/lb. C z High Current Handling Capability Weight TO-264 10 g z International Standard Packages PLUS247 6 g Advantages z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values z Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J z UPS z BV I = 250A, V = 0V 600 V Motor Drives CES C GE z SMPS V I = 500A, V = V 3.0 5.0 V z GE(th) C CE GE PFC Circuits z Battery Chargers I V = V , V = 0V 50 A CES CE CES GE z Welding Machines T = 125C 3 mA J z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 100A, V = 15V, Note 1 1.5 1.8 V CE(sat) C GE 2010 IXYS CORPORATION, All Rights Reserved DS99993A(09/10)IXGK120N60B3 IXGX120N60B3 Symbol Test Conditions Characteristic Values TO-264 AA ( IXGK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 100 170 S fs C CE C 14.6 nF ies C V = 25V, V = 0V, f = 1MHz 790 pF oes CE GE C 140 pF res Q 465 nC g Q I = 120A, V = 15V, V = 0.5 V 74 nC ge C GE CE CES Terminals: 1 = Gate Q 167 nC gc 2,4 = Collector Back Side 3 = Emitter t 40 ns d(on) Inductive load, T = 25C J Dim. Millimeter Inches t 87 ns Min. Max. Min. Max. ri I = 100A, V = 15V A 4.82 5.13 .190 .202 E C GE 2.9 mJ on A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 t 227 ns V = 480V, R = 2 d(off) CE G b 1.12 1.42 .044 .056 t 145 ns b1 2.39 2.69 .094 .106 Note 2 fi b2 2.90 3.09 .114 .122 E 3.5 mJ c 0.53 0.83 .021 .033 off D 25.91 26.16 1.020 1.030 t 38 ns E 19.81 19.96 .780 .786 d(on) Inductive load, T = 125C e 5.46 BSC .215 BSC J t 85 ns J 0.00 0.25 .000 .010 ri K 0.00 0.25 .000 .010 I = 100A, V = 15V E 4.0 mJ C GE on L 20.32 20.83 .800 .820 t 290 ns L1 2.29 2.59 .090 .102 d(off) V = 480V, R = 2 CE G P 3.17 3.66 .125 .144 t 230 ns fi Q 6.07 6.27 .239 .247 Note 2 Q1 8.38 8.69 .330 .342 E 4.7 mJ off R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 R 0.16 C/W thJC S 6.04 6.30 .238 .248 R 0.15 C/W T 1.57 1.83 .062 .072 thCS TM PLUS247 (IXGX) Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537