IXGX 32N170AH1 V = 1700 V High Voltage IGBT CES I = 32 A C25 with Diode V = 5.0 V CE(sat) t = 50 ns fi(typ) PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE V Continuous 20 V GES (TAB) G V Transient 30 V GEM C E I T = 25C32A C25 C G = Gate, C = Collector, I T = 90C21A C90 C E = Emitter, TAB = Collector I 18 A F90 I T = 25C, 1 ms 110 A CM C SSOA V = 15 V, T = 125C, R = 5 I = 70 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V CES Features t T = 125C, V = 1200 V V = 15 V, R = 10 10 s z SC J CE GE G High current handling capability z MOS Gate turn-on P T = 25C 350 W C C - drive simplicity z T -55 ... +150 C Rugged NPT structure J z Molding epoxies meet UL 94 V-0 T 150 C JM flammability classification T -55 ... +150 C stg Applications F Mounting force with clip 22...130/5...30 N/lb C z Capacitor discharge & pulser circuits z AC motor speed control Maximum lead temperature for soldering 300 C z DC servo and robot drives 1.6 mm (0.062 in.) from case for 10 s z DC choppers Weight 6g z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. BV I = 1mA, V = 0 V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V T = 25C 100 A CES CE CES J V = 0 V Note 1 T = 125C3mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = I , V = 15 V T = 25C 4.0 5.0 V CE(sat) C C90 GE J T = 125C 4.8 V J DS99070C(01/06) 2006 IXYS All rights reserved OBSOLETEIXGX 32N170AH1 Symbol Test Conditions Characteristic Values PLUS247 Outline (IXGX) (T = 25C, unless otherwise specified) J Min. Typ. Max. g I = I V = 10 V 16 30 S fs C C25 CE Note 2 C 3670 pF ies C V = 25 V, V = 0 V, f = 1 MHz 185 pF oes CE GE C 44 pF res Q 157 nC g Q I = I , V = 15 V, V = 0.5 V 25 nC ge C C90 GE CE CES Q 57 nC gc t Inductive load, T = 25C 27 ns d(on) J t I = I , V = 15 V 50 ns ri C C25 GE R = 2.7 , V = 0.5 V E 4.1 mJ G CE CES on t 270 500 ns d(off) t 50 100 ns fi E 1.25 2.5 mJ off Inductive load, T = 125C J t 27 ns d(on) I = I , V = 15 V C C25 GE t 47 ns ri R = 2.7 , V = 0.5 V G CE CES E 5.2 mJ on t 280 ns d(off) t 82 ns fi E 1.7 mJ off R 0.35 K/W thJC R 0.15 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. V I = 60A, V = 0 V, Pulse test, 2.4 2.7 V F F GE t 300 s, duty cycle d 2 % T = 150C 2.4 V J I I = 60A, V = 0 V, -di /dt = 600 A/s50 A RM F GE F V = 1200 V T = 125C55 A R J t 150 ns rr T = 125C 350 ns J R 0.35 K/W thJC Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 OBSOLETE