Advance Technical Information IXGX 32N170H1 V = 1700 V High Voltage CES I = 75 A C25 IGBT with Diode V = 3.3 V CE(sat) t = 290 ns fi(typ) PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE V Continuous 20 V GES (TAB) G V Transient 30 V GEM C E I T = 25C75A C25 C G = Gate, C = Collector, I T = 90C32A C90 C E = Emitter, TAB = Collector I T = 25C, 1 ms 200 A CM C SSOA V = 15 V, T = 125C, R = 5 I = 90 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V CES t T = 125C, V = 1200 V V = 15 V, R = 10 10 s SC J CE GE G Features z High current handling capability P T = 25C 350 W C C z MOS Gate turn-on T -55 ... +150 C J - drive simplicity z T 150 C Rugged NPT structure JM z Molding epoxies meet UL 94 V-0 T -55 ... +150 C stg flammability classification F Mounting force with chip 22...130/5...30 N/lb C Applications z Maximum lead temperature for soldering 300 C Capacitor discharge & pulser circuits z 1.6 mm (0.062 in.) from case for 10 s AC motor speed control z DC servo and robot drives Weight 6g z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. BV I = 1mA, V = 0 V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V T = 25C 500 A CES CE CES J V = 0 V Note 1 T = 125C8mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = I , V = 15 V T = 25C 2.5 3.3 V CE(sat) C C90 GE J T = 125C 3.0 V J DS99071(07/03) 2003 IXYS All rights reserved OBSOLETEIXGX 32N170H1 Symbol Test Conditions Characteristic Values PLUS247 Outline (IXGX) (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V 25 33 S fs C C25 CE Note 2 C 3500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 250 pF oes CE GE C 40 pF res Q 155 nC g Q I = I , V = 15 V, V = 0.5 V 30 nC ge C C90 GE CE CES Q 51 nC gc t Inductive load, T = 25C 45 ns d(on) J t I = I , V = 15 V 38 ns ri C C90 GE t R = 2.7 , V = 0.8 V 270 500 ns d(off) G CE CES Note 3 t 250 500 ns fi E 15 25 mJ off t Inductive load, T = 125C 48 ns d(on) J t I = I , V = 15 V 42 ns ri C C90 GE E R = 2.7 , V = 0.8 V 6.0 mJ on G CE CES t 360 ns Note 3 d(off) t 560 ns fi E 22 mJ off R 0.35 K/W thJC R 0.15 K/W thCK Reverse Diode (FRED) (Note 4) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 70A, V = 0 V, Pulse test, 2.7 V F F GE t 300 s, duty cycle d 2 % I I = 50A, V = 0 V, -di /dt = 800 A/s50 A RM F GE F t V = 600 V 150 ns rr R R 0.4 K/W thJC Notes:1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Switching times may increase for V (Clamp) > 0.8 V , higher T or CE CES J increased R . G 4. See DH60-18A and IXGH32N170A datasheets for additional characteristics IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 OBSOLETE