TM V = 600V GenX3 600V IXGK72N60B3H1 CES I = 72A IGBT w/ Diode IXGX72N60B3H1 C110 V 1.8V CE(sat) t = 92ns Medium Speed Low Vsat PT fi(typ) IGBTs 5-40 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 600 V CES J C E V T = 25 C to 150 C, R = 1M 600 V CGR J GE Tab V Continuous 20 V GES PLUS247 (IXGX) V Transient 30 V GEM I T = 25 C ( Chip Capability) 178 A C25 C I Terminal Current Limit 160 A LRMS I T = 110 C72A C110 C G G I T = 25 C, 1ms 450 A C CM C Tab E SSOA V = 15V, T = 125C, R = 3 I = 240 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES G = Gate E = Emitter C = Collector Tab = Collector P T = 25 C 540 W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T Maximum Lead Temperature for Soldering 300 C L Optimized for Low Conduction and T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Switching Losses M Mounting Torque (TO-264) 1.13/10 Nm/lb.in Square RBSOA d Anti-Parallel Ultra Fast Diode F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Power Inverters I V = V , V = 0V 300 A CES CE CES GE UPS T = 150C 5 mA J Motor Drives I V = 0V, V = 20V 100 nA GES CE GE SMPS PFC Circuits V I = 60A, V = 15V, Note 1 1.50 1.80 V CE(sat) C GE I = 120A 1.75 V Battery Chargers C Welding Machines Lamp Ballasts 2016 IXYS CORPORATION, All Rights Reserved DS99869C(01/16)IXGK72N60B3H1 IXGX72N60B3H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. D J B A E g I = 50A, V = 10V, Note 1 45 76 S Q S fs C CE R Q1 D C 6800 pF ies R1 C V = 25V, V = 0V, f = 1MHz 575 pF oes CE GE 1 2 3 C L1 C 80 pF res L Q 225 nC g(on) O J M C A M Q I = 60A, V = 15V, V = 0.5 V 40 nC ge C GE CE CES c b b2 b1 A1 Q 82 nC e gc PINS: 1 - Gate BACK SIDE 2,4 - Collector t 31 ns A d(on) 3 - Emitter OP O O K M D B M 4 Inductive load, T = 25C t J 33 ns ri I = 50A, V = 15V C GE E 1.4 mJ on V = 480V, R = 3 CE G t 152 240 ns d(off) Note 2 t 92 150 ns fi E 1.0 2.0 mJ off t 29 ns d(on) Inductive load, T = 125C t J 34 ns ri I = 50A, V = 15V E C GE 2.7 mJ on V = 480V, R = 3 t 228 ns CE G d(off) t 142 ns Note 2 fi E 2.2 mJ off R 0.23 C/W thJC R 0.15 C/W TM thCS PLUS247 Outline A E A2 Q D2 R D1 D Reverse Diode (FRED) 4 1 2 3 L1 Symbol Test Conditions Characteristic Values E1 (T = 25C, Unless Oherwise Specified) Min. Typ. Max. J L V I = 60A, V = 0V, Note 1 2.45 V F F GE A1 b T = 150C 1.40 1.80 V J C b2 PINS: b4 e 1 - Gate I = 60A, V = 0V, T = 100C I F 8.3GE J A 2 - Collector RM 3 - Emitter -di /dt = 200A/ sV = 300V F R t 140 ns rr R 0.30 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537