TM GenX3 600V IGBT V = 600V IXGX72N60C3H1 CES I = 72A with Diode C110 V 2.5V CE(sat) t = 55ns High-Speed PT IGBT for fi(typ) 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE GG V Continuous 20 V D C GES Tab S E V Transient 30 V GEM I T = 25C (Limited by Leads) 75 A C25 C G = Gate C = Collector I T = 110C (Chip Capability) 72 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 360 A CM C I T = 25C 50 A A C E T = 25C 500 mJ AS C Features SSOA V = 15V, T = 125C, R = 2 I = 150 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES z Optimized for Low Switching Losses z Square RBSOA P T = 25C 540 W C C z Avalanche Rated z T -55 ... +150 C Anti-Parallel Ultra Fast Diode J z T 150 C International Standard Package JM T -55 ... +150 C stg M Mounting Force 20..120 / 4.5..27 N/lb. Advantages F T Maximum Lead Temperature for Soldering 300 C L z High Power Density T 1.6mm (0.062 in.) from Case for 10s 260 C z SOLD Low Gate Drive Requirement Weight PLUS247 6 g Applications z Power Inverters Symbol Test Conditions Characteristic Values z UPS (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Motor Drives z SMPS V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z PFC Circuits I V = V , V = 0V 250 A z CES CE CES GE Battery Chargers T = 125C 3 mA z J Welding Machines z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 50A, V = 15V, Note 1 2.10 2.50 V CE(sat) C GE T = 125C 1.65 J 2009 IXYS CORPORATION, All Rights Reserved DS100011A(11/09)IXGX72N60C3H1 Symbol Test Conditions Characteristic Values TM PLUS247 (IXGX) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 33 55 S fs C CE C 4780 pF ies C V = 25V, V = 0V, f = 1MHz 330 pF oes CE GE C 117 pF res Q 174 nC g Q I = 50A, V = 15V, V = 0.5 V 33 nC ge C GE CE CES Terminals: 1 - Gate Q 72 nC 2 - Drain (Collector) gc 3 - Source (Emitter) 4 - Drain (Collector) t 27 ns d(on) Dim. Millimeter Inches Inductive Load, T = 25C t 37 ns J ri Min. Max. Min. Max. E 1.03 mJ A 4.83 5.21 .190 .205 on I = 50A, V = 15V C GE A 2.29 2.54 .090 .100 1 t 77 130 ns d(off) A 1.91 2.16 .075 .085 2 V = 480V, R = 2, Note 2 CE G b 1.14 1.40 .045 .055 t 55 110 ns fi b 1.91 2.13 .075 .084 1 E 0.48 0.95 mJ b 2.92 3.12 .115 .123 off 2 C 0.61 0.80 .024 .031 t 26 ns d(on) D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 Inductive Load, T = 25C t 36 ns J ri e 5.45 BSC .215 BSC E 1.48 mJ on L 19.81 20.32 .780 .800 I = 50A, V = 15V C GE L1 3.81 4.32 .150 .170 t 120 ns d(off) Q 5.59 6.20 .220 0.244 V = 480V, R = 2, Note 2 t 124 ns CE G fi R 4.32 4.83 .170 .190 E 0.93 mJ off R 0.23 C/W thJC R 0.15 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.0 V F F GE T = 150C 1.4 1.8 V J I 8.3 A I = 60A, V = 0V, T = 100C RM F GE J t 140-di /dt = 200A/s, V = 300V ns rr F R R 0.3 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537