X-On Electronics has gained recognition as a prominent supplier of IXGX82N120B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGX82N120B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGX82N120B3 IXYS

IXGX82N120B3 electronic component of IXYS
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Part No.IXGX82N120B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors GenX3 1200V IGBTs
Datasheet: IXGX82N120B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 18.9291 ea
Line Total: USD 18.93 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 18.9291
3 : USD 17.8843

   
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We are delighted to provide the IXGX82N120B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGX82N120B3 and other electronic components in the IGBT Transistors category and beyond.

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The IXGX82N120B3 is a GenX3-Series IGBT Transistor manufactured by IXYS. This device is designed for medium to high power applications. It features 1200V breakdown voltage and excellent thermal resistance ratings. The IXGX82N120B3 contains two IGBTs in one package, with each transistor weighing around 4.3g. This device is optimized for efficient switching at high frequency, and has the capacity to handle a total device power dissipation of up to 600 W. This device provides both reverse and forward blocking, along with diode emulation mode, and an enhanced gate drive circuit for high speed operation. The integrated reverse conductivity protection feature further increases the benefits of this device, as it ensures that the IC stays protected from over-voltage conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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