IXKN45N80C IXYS

IXKN 45N80C 1) V = 800 V DSS CoolMOS Power MOSFET I = 44 A D25 R = 74 m DS(on) max N-Channel Enhancement Mode Low R , High V MOSFET DSon DSS D miniBLOC, SOT-227 B S G G E72873 S S G = Gate S = Source S D = Drain D Either source terminal at miniBLOC can be used as main or Kelvin Source Features MOSFET miniBLOC package Symbol Conditions Maximum Ratings - Electrically isolated copper base V T = 25C 800 V - Low coupling capacitance to the DSS VJ heatsink for reduced EMI V 20 V GS - International standard package SOT-227 - Easy screw assembly I T = 25C 44 A D25 C ) CoolMOS power MOSFET I T = 90C 30 A D90 C rd 3 generation 6 - high blocking capability d /dt V < V I = 7 A di /dt < 00 As V/ns V DS DSS F F - lowest resistance E I = 4 A L = 80 mH T = 25C 670 mJ AS D C - avalanche rated for unclamped E I = 7 A L = 3 mH T = 25C 0.5 mJ AR D C inductive switching (UIS) - low thermal resistance due to reduced chip thickness ) Symbol Conditions Characteristic Values fast CoolMOS power MOSFET rd 3 generation (T = 25C, unless otherwise specified) VJ - High blocking capability min. typ. max. - Low on resistance - Avalanche rated for unclamped R V = 0 V I = I 63 74 mW DSon GS D 25 inductive switching (UIS) - Low thermal resistance V V = V I = 4 mA 2. 3.9 V GS(th) GS DS D due to reduced chip thickness Enhanced total power density I V = V V = 0 V T = 25C 50 A DSS DS DSS GS VJ T = 25C 200 A VJ Applications I V = 20 V V = 0 V 400 nA GSS GS DS Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Q 360 nC g Power factor correction (PFC) Q V = 0 V V = 640 V I = 70 A 48 nC gs GS DS D Welding Q 84 nC gd Inductive heating t 25 ns d(on) t V = 0 V V = 400 V 5 ns r GS DS t I = 70 A R = .2 T = 25C 75 ns d(off) D G VJ t 0 ns f R 0.33 K/W thJC ) CoolMOS is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. 20080526a 2008 IXYS All rights reserved - 4IXKN 45N80C Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. I V = 0 V 60 A S GS V I = 65 A V = 0 V 0.9 .2 V SD F GS t 500 800 ns rr Q I = 80 A -di /dt = 400 A/s V = 480 V 45 C RM F F R I 280 A RM Component Symbol Conditions Maximum Ratings T operating -55...+ 50 C VJ T storage -55...+25 C stg V I < mA, 50/60 Hz 2500 V~ ISOL ISOL M mounting torque .5 Nm d terminal connection torque .5 Nm Symbol Conditions Characteristic Values min. typ. max. with heatsink compound 0. R K/W thCH Weight 30 g IXYS reserves the right to change limits, test conditions and dimensions. 20080526a 2008 IXYS All rights reserved 2 - 4