IXKN 75N60C 1) V = 600 V DSS CoolMOS Power MOSFET I = 75 A D25 R = 36 m DS(on) max N-Channel Enhancement Mode Low R , High V MOSFET DSon DSS D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source Features MOSFET miniBLOC package Symbol Conditions Maximum Ratings - Electrically isolated copper base V T = 25C to 150C 600 V - Low coupling capacitance to the heatsink DSS VJ for reduced EMI V 20 V GS - High power dissipation due to AlN ceramic substrate I T = 25C 75 A D25 C - International standard package SOT-227 I T = 90C 50 A D90 C - Easy screw assembly 1) fast CoolMOS power MOSFET I pulse drain current, t limited by T 250 A D puls p Jmax rd 3 generation E I = 10 A L = 36 mH T = 25C 1.8 J AS D C - High blocking capability E I = 20 A L = 5 mH T = 25C 1 mJ AR D C - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) dv/dt V < V I < 100A T = 125C 6 V/ns - Low thermal resistance DS DSS F VJ due to reduced chip thickness di /dt < 100A/s F Enhanced total power density Symbol Conditions Characteristic Values Applications (T = 25C, unless otherwise specified) VJ Switched mode power supplies (SMPS) min. typ. max. Uninterruptible power supplies (UPS) Power factor correction (PFC) R V = 10 V I = I 30 36 mW DSon GS D D90 Welding V Inductive heating V = 20 V I = 5 mA 2.1 3.9 V GS(th) DS D I V = V V = 0 V T = 25C 50 A DSS DS DSS GS VJ T = 125C 100 A VJ 1) I V = 20 V V = 0 V 200 nA GSS GS DS CoolMOS is a trademark of Infineon Technologies AG. Q 500 nC g Q V = 0 to 10 V V = 350 V I = 100 A 50 nC gs GS DS D Q 240 nC gd t 20 ns d(on) t V = 10 V V = 380 V 30 ns r GS DS t I = 100 A R = 1.0 W 110 ns d(off) D G t 10 ns f V (reverse conduction) I = 37.5 A V = 0 V 0.9 1.1 V F F GS R 0.22 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20100609c 2010 IXYS All rights reserved 1 - 4D IXKN 75N60C Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. I V = 0 V 85 A S GS I 250 A SM V I = 85 A V = 0 V 1.2 V SD F GS t 580 ns rr Q I = 85 A -di /dt = 200 A/s V = 350 V 46 C RM F F R I 140 A RM Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T -55...+125 C stg M mounting torque 1.5 Nm d terminal connection torque (M4) 1.5 Nm Symbol Conditions Characteristic Values min. typ. max. R with heatsink compound 0.1 K/W thCH Weight 30 g miniBLOC, SOT-227 B Outline H A J SYM MILLIMETERS INCHES G MIN MAX MIN MAX B K A 31.50 31.88 1.240 1.255 B 7.80 8.20 .307 .323 C 4.09 4.29 .161 .169 D 4.09 4.29 .161 .169 E 4.09 4.29 .161 .169 F 14.91 15.11 .587 .595 G 30.12 30.30 1.186 1.193 H 37.80 38.23 1.489 1.505 J 11.68 12.22 .460 .481 K 8.92 9.60 .351 .378 L 0.76 0.84 .030 .033 M 12.60 12.85 .496 .506 L E N 25.15 25.42 .990 1.001 O 1.98 2.13 .078 .084 F P Nut M4 DIN 934 P 4.95 5.97 .195 .235 Lens Head Screw M4x8 Q 26.54 26.90 1.045 1.059 Q DIN 7985 R 3.94 4.42 .155 .174 S 4.72 4.85 .186 .191 T 24.59 25.07 .968 .987 U -.05 .10 -.002 .004 V 3.30 4.57 .130 .180 W 19.81 21.08 .780 .830 U IXYS reserves the right to change limits, test conditions and dimensions. 20100609c 2010 IXYS All rights reserved 2 - 4 T V M W N S O R C