X-On Electronics has gained recognition as a prominent supplier of IXKN75N60C Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXKN75N60C Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

IXKN75N60C IXYS

IXKN75N60C electronic component of IXYS
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See Product Specifications
Part No.IXKN75N60C
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 75 Amps 600V
Datasheet: IXKN75N60C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 26.59 ea
Line Total: USD 53.18 
Availability - 0
MOQ: 2  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Thu. 29 Aug to Mon. 02 Sep
MOQ : 1
Multiples : 1
1 : USD 49.6682
10 : USD 41.9942
25 : USD 40.3787
100 : USD 38.701
500 : USD 37.2097
1000 : USD 35.9256

0
Ship by Fri. 23 Aug to Thu. 29 Aug
MOQ : 1
Multiples : 1
1 : USD 74.7123

0
Ship by Fri. 23 Aug to Thu. 29 Aug
MOQ : 2
Multiples : 10
2 : USD 26.59
25 : USD 25.0159

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Height
Length
Transistor Type
Width
Brand
Number Of Channels
Transistor Polarity
Channel Mode
Cnhts
Fall Time
Hts Code
Id - Continuous Drain Current
Mxhts
Product Type
Qg - Gate Charge
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Tradename
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the IXKN75N60C from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXKN75N60C and other electronic components in the Discrete Semiconductor Modules category and beyond.

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IXKN 75N60C 1) V = 600 V DSS CoolMOS Power MOSFET I = 75 A D25 R = 36 m DS(on) max N-Channel Enhancement Mode Low R , High V MOSFET DSon DSS D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source Features MOSFET miniBLOC package Symbol Conditions Maximum Ratings - Electrically isolated copper base V T = 25C to 150C 600 V - Low coupling capacitance to the heatsink DSS VJ for reduced EMI V 20 V GS - High power dissipation due to AlN ceramic substrate I T = 25C 75 A D25 C - International standard package SOT-227 I T = 90C 50 A D90 C - Easy screw assembly 1) fast CoolMOS power MOSFET I pulse drain current, t limited by T 250 A D puls p Jmax rd 3 generation E I = 10 A L = 36 mH T = 25C 1.8 J AS D C - High blocking capability E I = 20 A L = 5 mH T = 25C 1 mJ AR D C - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) dv/dt V < V I < 100A T = 125C 6 V/ns - Low thermal resistance DS DSS F VJ due to reduced chip thickness di /dt < 100A/s F Enhanced total power density Symbol Conditions Characteristic Values Applications (T = 25C, unless otherwise specified) VJ Switched mode power supplies (SMPS) min. typ. max. Uninterruptible power supplies (UPS) Power factor correction (PFC) R V = 10 V I = I 30 36 mW DSon GS D D90 Welding V Inductive heating V = 20 V I = 5 mA 2.1 3.9 V GS(th) DS D I V = V V = 0 V T = 25C 50 A DSS DS DSS GS VJ T = 125C 100 A VJ 1) I V = 20 V V = 0 V 200 nA GSS GS DS CoolMOS is a trademark of Infineon Technologies AG. Q 500 nC g Q V = 0 to 10 V V = 350 V I = 100 A 50 nC gs GS DS D Q 240 nC gd t 20 ns d(on) t V = 10 V V = 380 V 30 ns r GS DS t I = 100 A R = 1.0 W 110 ns d(off) D G t 10 ns f V (reverse conduction) I = 37.5 A V = 0 V 0.9 1.1 V F F GS R 0.22 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20100609c 2010 IXYS All rights reserved 1 - 4D IXKN 75N60C Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. I V = 0 V 85 A S GS I 250 A SM V I = 85 A V = 0 V 1.2 V SD F GS t 580 ns rr Q I = 85 A -di /dt = 200 A/s V = 350 V 46 C RM F F R I 140 A RM Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T -55...+125 C stg M mounting torque 1.5 Nm d terminal connection torque (M4) 1.5 Nm Symbol Conditions Characteristic Values min. typ. max. R with heatsink compound 0.1 K/W thCH Weight 30 g miniBLOC, SOT-227 B Outline H A J SYM MILLIMETERS INCHES G MIN MAX MIN MAX B K A 31.50 31.88 1.240 1.255 B 7.80 8.20 .307 .323 C 4.09 4.29 .161 .169 D 4.09 4.29 .161 .169 E 4.09 4.29 .161 .169 F 14.91 15.11 .587 .595 G 30.12 30.30 1.186 1.193 H 37.80 38.23 1.489 1.505 J 11.68 12.22 .460 .481 K 8.92 9.60 .351 .378 L 0.76 0.84 .030 .033 M 12.60 12.85 .496 .506 L E N 25.15 25.42 .990 1.001 O 1.98 2.13 .078 .084 F P Nut M4 DIN 934 P 4.95 5.97 .195 .235 Lens Head Screw M4x8 Q 26.54 26.90 1.045 1.059 Q DIN 7985 R 3.94 4.42 .155 .174 S 4.72 4.85 .186 .191 T 24.59 25.07 .968 .987 U -.05 .10 -.002 .004 V 3.30 4.57 .130 .180 W 19.81 21.08 .780 .830 U IXYS reserves the right to change limits, test conditions and dimensions. 20100609c 2010 IXYS All rights reserved 2 - 4 T V M W N S O R C

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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