15 A Dual Low-Side RF MOSFET Driver IXRFD615X2 Description The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Push- Pull and Class E Push-Pull HF RF applications as well as oth- er applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD615X2 can source and sink 15 A of peak current per driver while producing voltage rise and fall times of less than 10 ns and minimum pulse widths of 8 ns. The inputs to the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross Features conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and High Peak Output Current power make the IXRFD615X2 unmatched in performance Low Output Impedance and value. Low Quiescent Supply Current Low Propagation Delay The surface mount IXRFD615X2 is packaged in a low- High Capacitive Load Capability inductance RF package incorporating advanced layout tech- Wide Operating Voltage Range niques to minimize stray lead inductances for optimum switching performance. The two drivers are constructed on a Applications single substrate sharing a common ground via the substrate and therefore are not capable of ground isolated operation RF MOSFET Driver from each other. An example would be a half-bridge which Push-Pull RF Generators requires a high-side floating and a ground referenced driver, Multi-MHz Switch Mode Supplies which is not suitable, as compared to a push-pull configura- Pulse Transformer Driver tion in which both drivers are ground referenced, making it a Pulse Laser Diode Driver suitable application. Pulse Generator Fig. 1 Block Diagram and Truth Table per Driver IN OUT 0 0 1 1 1 15 A Dual Low-Side RF MOSFET Driver IXRFD615X2 Absolute Maximum Ratings Parameter Value Parameter Value Maximum Junction Temperature 150 C Supply Voltage V 30 V CC Operating Temperature Range -40 C to 85 C Input Voltage Level V -5 V to V + 0.3 V IN CC All Other Pins -0.3 V to V +0.3 V Thermal Impedance (Junction to Case) R 0.25 C/W CC JC Total Power Dissipation Note: Operating the device outside of the Absolute Maximum T 25C 2 W A (AMBIENT) Ratings may cause permanent damage. Typical values indicate 100 W T 25C C (CASE) conditions for which the device is intended to be functional but do Storage Temperature -40 C to 150 C not guarantee specific performance limits. The guaranteed specifica- tions apply only for the test conditions listed. Exposure to absolute Soldering Lead Temperature 300 C maximum conditions for extended periods may impact device relia- (10 seconds maximum) bility. Electrical Characteristics Unless otherwise noted, T = 25 C, 8 V < V < 30 V. A CC All voltage measurements with respect to GND. IXRFD615X2 configured as described in Test Conditions for one driver. Min Symbol Parameter Test Conditions Typ Max Units High input voltage V CC = 1 5 V f o r ty p ical value 3. 5 3 V VIH VIL Low input voltage VCC = 15 V for typical value 2.8 0.8 V V Input hysteresis 0.23 VHYS V VIN Input voltage range -5 VCC + 0.3 IIN Input current -10 10 A 0 V VIN VCC VOH High output voltage V CC - 0 . 0 2 5 V VOL Low output voltage 0.025 V ROH High output resistance VCC = 15 V IOUT = 100 mA 0.5 ROL Low output resistance VCC = 15 V IOUT = 100 mA 0.35 IPEAK Peak output current VCC = 15 V 14 A IDC Continuous output current 1.3 A VCC=15 V CL=1 nF 4 ns tR Rise time CL=2 nF 6 ns VCC =15 V CL=1 nF 4 ns tF Fall time CL=2 nF 5.5 ns ON propagation delay VCC =15 V CL=2 nF 24 ns tONDLY OFF propagation delay VCC =15 V CL=2 nF 22 ns tOFFDLY Minimum pulse width FWHM VCC =15 V CL=1 nF 8 ns PWmin VCC Power supply voltage Recommended 8 15 18 V V = 15 V, VIN = 0 V 0 1 mA CC ICC Power supply current V = 15 V, VIN = 3.5 V 1 3 mA CC V = 15 V, VIN = VCC 0 5 mA CC CAUTION: These devices are sensitive to electrostatic discharge follow proper ESD procedures when handling and assembling. All specifications are subject to change at any time without notice. 2