High Speed IGBT IXSA 10N60B2D1 V = 600 V
CES
IXSP 10N60B2D1
with Diode I = 20 A
C25
V = 2.5 V
CE(sat)
Short Circuit SOA Capability
Preliminary Data Sheet
D1
Symbol Test Conditions Maximum Ratings
TO-263 (IXSA)
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
V Continuous 20 V
GES
G
V Transient 30 V
E
GEM C (TAB)
I T = 25C20A
C25 C
TO-220AB (IXSP)
I T = 110C10A
C110 C
I 11 A
F(110)
I T = 25C, 1 ms 30 A
CM C
SSOA V = 15 V, T = 125C, R = 82 I = 20 A
GE J G CM
C (TAB)
(RBSOA) Clamped inductive load, V = 20 V @ 0.8 V
GE CES
G
t V = 15 V, V = 360 V, T = 125C 10 s
C
SC GE CE J E
(SCSOA) R = 150 , non repetitive
G
P T = 25C 100 W
C C
G = Gate C = Collector
T -55 ... +150 C
J E = Emitter TAB = Collector
T 150 C
JM
T -55 ... +150 C
stg
Features
Maximum lead temperature for soldering 300 C International standard packages
Guaranteed Short Circuit SOA
1.6 mm (0.062 in.) from case for 10 s
capability
Plastic Body t = 10s 250 C
Low V
CE(sat)
M Mounting torque (TO-220) 1.3/10 Nm/lb. in
d
- for low on-state conduction losses
High current handling capability
Weight 2 g
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Symbol Test Conditions Characteristic Values
(T = 25C, unless otherwise specified)
J
Applications
min. typ. max.
AC motor speed control
Uninterruptible power supplies (UPS)
V I = 750 A, V = V 4.0 7.0 V
GE(th) C CE GE
Welding
I V = V 75 A
CES CE CES
Advantages
V = 0 V 200 A
GE
High power density
I V = 0 V, V = 20 V 100 nA
GES CE GE
V I = 10A, V = 15 V 2.5 V
CE(sat) C GE
DS99193A(10/04)
2004 IXYS All rights reservedIXSA 10N60B2D1
IXSP 10N60B2D1
Symbol Test Conditions Characteristic Values
TO-220 AB (IXSP) Outline
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = 10A; V = 10 V, Note 1 2.0 3.6 S
fs C CE
C 400 pF
ies
C V = 25 V, V = 0 V 50 pF
oes CE GE
C f = 1 MHz 11 pF
res
Q 17 nC
g
Q I = 10A, V = 15 V, V = 0.5 V 6nC
ge C GE CE CES
Q 7.5 nC
gc
Dim. Millimeter Inches
t 30 ns
d(on)
Inductive load, T = 25C
Min. Max. Min. Max.
J
t 30 ns
A 12.70 13.97 0.500 0.550
ri
I = 10A, V = 15 V
C GE
B 14.73 16.00 0.580 0.630
t V = 0.8 V , R = 30 180 ns
d(off) CE CES G
C 9.91 10.66 0.390 0.420
Switching times may increase for V
CE D 3.54 4.08 0.139 0.161
t 165 ns
fi
(Clamp) > 0.8 V , higher T or
CES J E 5.85 6.85 0.230 0.270
E 430 750 J
off increased R F 2.54 3.18 0.100 0.125
G
G 1.15 1.65 0.045 0.065
t 30 ns
H 2.79 5.84 0.110 0.230
d(on)
J 0.64 1.01 0.025 0.040
t 30 ns
ri
K 2.54 BSC 0.100 BSC
Inductive load, T = 125C
J
E 0.32 mJ
M 4.32 4.82 0.170 0.190
on
I = 10 A, V = 15 V
N 1.14 1.39 0.045 0.055
C GE
t 260 ns
d(off)
V = 0.8 V , R = 30
Q 0.35 0.56 0.014 0.022
CE CES G
R 2.29 2.79 0.090 0.110
t 270 ns
Switching times may increase for
fi
V (Clamp) > 0.8 V , higher T
E 790 J
CE CES J
off
TO-263 (IXSA) Outline
or increased R
G
R 1.25 K/W
thJC
R TO-220 0.25 K/W
thCS
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = 10A, V = 0 V T =150C 1.66 V
F F GE J
2.66 V
I I = 12A, V = 0 V, -di /dt = 100 A/s T = 100C 1.5 A
RM F GE F J
t V = 100 V T = 100C90 ns
rr R J
Dim. Millimeter Inches
Min. Max. Min. Max.
t I = 1 A; -di/dt = 100 A/s; V = 30 V 25 ns
rr F R A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
R 2.5 K/W
thJC b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
Note 1: Pulse test, t 300 s, duty cycle d 2 %
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
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