IXSA 20N60B2D1 V = 600 V High Speed IGBT CES IXSP 20N60B2D1 I = 35 A C25 V = 2.5 V Short Circuit SOA Capability CE(sat) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE C (TAB) V Continuous 20 V GES G C V Transient 30 V E GEM I T = 25C35A C25 C I T = 110C20A C110 C TO-220 (IXSA) I 11 A F(110) I T = 25C, 1 ms 60 A CM C SSOA V = 15 V, T = 125C, R = 82 I = 32 A GE J G CM (RBSOA) Clamped inductive load 0.8 V CES G C (TAB) C t V = 15 V, V = 360 V, T = 125C 10 s SC GE CE J (SCSOA) R = 82 , non repetitive G P T = 25C 190 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C Features stg Weight 2 g International standard packages Guaranteed Short Circuit SOA Maximum lead temperature for soldering 300 C capability 1.6 mm (0.062 in.) from case for 10 s Low V Maximum tab temperature for soldering for 10s 260 C CE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) - drive simplicity J min. typ. max. Fast fall time for switching speeds up to 20 kHz BV I = 250 A, V = 0 V 600 V CES C GE V I = 750 A, V = V 3.5 6.5 V GE(th) C CE GE Applications I V = V 85 A CES CE CES AC motor speed control V = 0 V T = 125 C 0.6 mA GE J Uninterruptible power supplies (UPS) Welding I V = 0 V, V = 20 V 100 nA GES CE GE V I = 16A, V = 15 V 2.5 V CE(sat) C GE Advantages High power density DS99181B(12/05) 2004 IXYS All rights reservedIXSA 20N60B2D1 IXSP 20N60B2D1 Symbol Test Conditions Characteristic Values TO-220 AB (IXSP) Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 16A V = 10 V, Note 1 3.5 7.0 S fs C CE C 800 pF ies C V = 25 V, V = 0 V 76 pF oes CE GE f = 1 MHz 20N60B2D1 90 pF C 28 pF res Q 33 nC g Q I = 16A, V = 15 V, V = 0.5 V 12 nC ge C GE CE CES Q 12 nC gc Inductive load, T = 25C t 30 ns J Dim. Millimeter Inches d(on) Min. Max. Min. Max. I = 16A, V = 15 V t 30 ns C GE ri A 12.70 13.97 0.500 0.550 V = 0.8 V , R = 10 CE CES G B 14.73 16.00 0.580 0.630 t 116 ns d(off) Switching times may increase for V CE C 9.91 10.66 0.390 0.420 t (Clamp) > 0.8 V , higher T or 126 ns D 3.54 4.08 0.139 0.161 fi CES J increased R E 5.85 6.85 0.230 0.270 E G 380 600 J off F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 t 30 ns d(on) H 2.79 5.84 0.110 0.230 Inductive load, T = 125C t 30 ns J 0.64 1.01 0.025 0.040 J ri K 2.54 BSC 0.100 BSC I = 16 A, V = 15 V E 20N60B2 0.12 mJ C GE on M 4.32 4.82 0.170 0.190 V = 0.8 V , R = 10 20N60B2D1 0.42 mJ CE CES G N 1.14 1.39 0.045 0.055 Switching times may increase for Q 0.35 0.56 0.014 0.022 t 180 ns d(off) V (Clamp) > 0.8 V , higher T R 2.29 2.79 0.090 0.110 CE CES J t 210 ns or increased R fi G TO-263 (IXSA) Outline E 970 J off R 0.66 K/W thJC R 0.3 K/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 10A, V = 0 V T =150C 1.66 V F F GE J 2.66 V I I = 12A, V = 0 V, -di /dt = 100 A/s T = 100C 1.5 A RM F GE F J t V = 100 V T = 100C90 ns rr R J t I = 1 A -di/dt = 100 A/s V = 30 V 30 ns rr F R Dim. Millimeter Inches Min. Max. Min. Max. R 2.5 K/W thJC A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 Note 1: Pulse test, t 300 s, duty cycle d 2 % b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2