High Speed IGBT IXSH 10N60B2D1 V = 600 V CES IXSQ 10N60B2D1 with Diode I =20A C25 Short Circuit SOA Capability V = 2.5 V CE(sat) Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V G GEM (TAB) C E I T = 25C20A C25 C I T = 110C10A C110 C TO-3P (IXSQ) I 11 A F(110) I T = 25C, 1 ms 30 A CM C SSOA V = 15 V, T = 125C, R = 82 I = 20 A GE J G CM (RBSOA) Clamped inductive load, V = 20 V 0.8 V GE CES t V = 15 V, V = 360 V, T = 125C 10 s G SC GE CE J C (SCSOA) R = 150 , non repetitive (TAB) G E P T = 25C 100 W G = Gate C = Collector C C E = Emitter TAB = Collector T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg International standard package M Mounting torque 1.3/10 Nm/lb. in Guaranteed Short Circuit SOA d capability Weight TO-247 5 g Low V CE(sat) TO-3P 5 g - for low on-state conduction losses High current handling capability Maximum lead temperature for soldering 300 C MOS Gate turn-on 1.6 mm (0.062 in.) from case for 10 s - drive simplicity Fast fall time for switching speeds up to 20 kHz Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Applications min. typ. max. AC motor speed control Uninterruptible power supplies (UPS) BV I = 250 A, V = 0 V 600 V CES C GE Welding V I = 750 A, V = V 4.0 7.0 V GE(th) C CE GE Advantages I V = V 75 A CES CE CES High power density V = 0 V 200 A GE I V = 0 V, V = 20 V 100 nA GES CE GE V I = 10A, V = 15 V 2.5 V CE(sat) C GE DS99236(10/04) 2004 IXYS All rights reservedIXSH 10N60B2D1 IXSQ 10N60B2D1 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 10A V = 10 V, Note 1 2.0 3.6 S fs C CE C 400 pF ies 1 2 3 C V = 25 V, V = 0 V 50 pF oes CE GE f = 1 MHz C 11 pF res Q 17 nC g Q I = 10A, V = 15 V, V = 0.5 V 6nC ge C GE CE CES Terminals: 1 - Gate 2 - Drain Q 7.5 nC 3 - Source Tab - Drain gc Dim. Millimeter Inches t 30 ns Inductive load, T = 25C d(on) J Min. Max. Min. Max. t 30 ns I = 10A, V = 15 V A 4.7 5.3 .185 .209 ri C GE A 2.2 2.54 .087 .102 1 V = 0.8 V , R = 30 t 180 ns CE CES G d(off) A 2.2 2.6 .059 .098 2 Switching times may increase for V CE b 1.0 1.4 .040 .055 t 165 ns fi (Clamp) > 0.8 V , higher T or CES J b 1.65 2.13 .065 .084 1 E 430 750 J increased R b 2.87 3.12 .113 .123 off G 2 C .4 .8 .016 .031 t 30 ns D 20.80 21.46 .819 .845 d(on) Inductive load, T = 125C J E 15.75 16.26 .610 .640 t 30 ns I = 10 A, V = 15 V ri e 5.20 5.72 0.205 0.225 C GE V = 0.8 V , R = 30 L 19.81 20.32 .780 .800 E 0.32 mJ CE CES G on L1 4.50 .177 Switching times may increase for t 260 ns d(off) P 3.55 3.65 .140 .144 V (Clamp) > 0.8 V , higher T CE CES J t 270 ns Q 5.89 6.40 0.232 0.252 fi or increased R G R 4.32 5.49 .170 .216 E 790 J off S 6.15 BSC 242 BSC R 1.25 K/W thJC TO-3P Outline R 0.25 K/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 10A, V = 0 V T =150C 1.66 V F F GE J 2.66 V I I = 12A, V = 0 V, -di /dt = 100 A/s T = 100C 1.5 A RM F GE F J t V = 100 V T = 100C90 ns rr R J t I = 1 A -di/dt = 100 A/s V = 30 V 25 ns Terminals: 1 - Gate 2 - Drain rr F R 3 - Source Tab - Drain R 2.5 K/W thJC Note 1: Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463