Advance Technical Information TM V I V HiPerFAST IGBT CES C90 CE(sat) IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J G TAB C V T = 25C to 150C, R = 1M 600 V CGR J GE E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C 48 A C25 C E = Emitter TAB = Collector I T = 90C24 A C90 C I T = 25C, 1ms 96 A CM C Features SSOA V = 15V, T = 125C, R = 10 I = 48 A GE J G CM z International standard package (RBSOA) Clamped inductive load 0.8 V V CES JEDEC TO-247AD t V = 15V, V = 360V, T = 125C 10 s z SC GE CE J High frequency IGBT with guaranteed (SCSOA) R = 82, non repetitive G Short Circuit SOA Capability z TM 2nd generation HDMOS process P T = 25C 150 W C C z Low V CE(SAT) T -55 ... +150 C J - for low on-state conduction losses T 150 C z JM MOS Gate turn-on T -55 ... +150 C - drive simplicity stg M Mounting torque 1.13 / 10 Nm/lb.in. d Applications T Maximum lead temperature for soldering 300 C L z T 1.6mm (0.062 in.) from case for 10s 260 C SOLD AC motor speed control z DC servo and robot drives Weight 6 g z DC choppers z Uninterruptible power supplies (UPS) z Switch-mode and resonant-mode Symbol Test Conditions Characteristic Values power supplies z (T = 25C, unless otherwise specified) Min. Typ. Max. Welding J BV I = 250 A, V = V 600 V CES C CE GE Advantages V I = 1.5mA, V = V 4.0 7.0 V GE(th) C CE GE I V = 0.8 V 200 A z CES CE CES Easy to mount with 1 screw s V = 0V T = 125C 1 mA (isolated mounting screw hole) GE J z Switching speed for high frequency I V = 0V, V = 20V 100 nA GES CE GE applications IXSH24N60 V I = 24A, V = 15V, Note 1 2.2 V z CE(sat) C GE High power density 2.7 V IXSH24N60A 2008 IXYS CORPORATION, All rights reserved DS92809I(07/08)IXSH24N60 IXSH24N60A Symbol Test Conditions Characteristic Values TO-247 (IXSH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 1 9 23 S fs C CE I V = 15V, V = 10V 65 A C(ON) GE CE P C 1800 pF 1 2 3 ies C V = 25V, V = 0V, f = 1MHz 160 pF oes CE GE C 45 pF res Q 75 90 nC g Q I = 24A, V = 15V, V = 0.5 V 20 30 nC ge C GE CE CES Q 35 50 nC e gc Terminals: 1 - Gate 2 - Drain t 100 ns d(on) 3 - Source Tab - Drain Inductive load, T = 25C t 200 ns J ri Dim. Millimeter Inches I = 24A, V = 15V Min. Max. Min. Max. C GE t 450 ns d(off) A 4.7 5.3 .185 .209 V = 480V, R = 10 IXSH24N60 t CE G 500 ns fi A 2.2 2.54 .087 .102 1 275 ns A 2.2 2.6 .059 .098 IXSH24N60A 2 b 1.0 1.4 .040 .055 E 2.0 mJ IXSH24N60A off b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 t 100 ns 2 d(on) C .4 .8 .016 .031 t 200 ns ri D 20.80 21.46 .819 .845 E 1.2 mJ Inductive load, T = 125C E 15.75 16.26 .610 .640 on J e 5.20 5.72 0.205 0.225 t 475 ns I = 24A, V = 15V d(off) C GE L 19.81 20.32 .780 .800 IXSH24N60 600 ns V = 480V, R = 10 L1 4.50 .177 CE G IXSH24N60A P 3.55 3.65 .140 .144 t 450 ns fi Q 5.89 6.40 0.232 0.252 IXSH24N60 E 4.0 mJ off R 4.32 5.49 .170 .216 3.0 mJ IXSH24N60A S 6.15 BSC 242 BSC R 0.83 C/W thJC R 0.21 C/W thCK Notes: 1. Pulse test, t 300s duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537