High Speed IGBT with Diode IXSH 30 N60CD1 V = 600 V CES IXSK 30 N60CD1 I = 55 A C25 IXST 30 N60CD1 V = 2.5 V CE(sat) Short Circuit SOA Capability t = 70 ns fi Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C V T = 25 C to 150 C 600 V E CES J V T = 25 C to 150 C R = 1 M 600 V CGR J GE TO-268 (D3) (IXST) V Continuous 20 V GES V Transient 30 V C GEM G I T = 25 C55A C25 C E I T = 90 C30A C90 C TO-264 I T = 25 C, 1 ms 110 A CM C (IXSK) SSOA V = 15 V, T = 125 C, R = 10 I = 60 A GE J G CM (RBSOA) Clamped inductive load, V = 0.8 V CL CES G t V = 15 V, V = 360 V, T = 125 C 10 s SC GE CE J C E (SCSOA) R = 33 non repetitive G G = Gate C = Collector P T = 25 C 200 W C C E = Emitter TAB = Collector T -55 ... +150 C J Features T 150 C JM International standard packages: T -55 ... +150 C JEDEC TO-247, TO-264& TO-268 stg Short Circuit SOA capability M Mounting torque 1.13/10 Nm/lb.in. d High freqeuncy IGBT and anti- Weight 6g parallel FRED in one package TM New generation HDMOS process Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Applications AC motor speed control DC servo and robot drives Symbol Test Conditions Characteristic Values DC choppers (T = 25 C, unless otherwise specified) J Uninterruptible power supplies (UPS) min. typ. max. Switch-mode and resonant-mode power supplies BV I = 750 A, V = 0 V 600 V CES C GE V I = 2.5 mA, V = V 47V Advantages GE(th) C CE GE Space savings (two devices in one I V = 0.8 V T = 25 C 200 A CES CE CES J package) V = 0 V T = 125 C3mA GE J Easy to mount with 1 screw I V = 0 V, V = 20 V 100 nA (isolated mounting screw hole) GES CE GE Surface mountable, high power case V V = 15 V I = I 2.5 V CE(sat) GE C C90 style Reduces assembly time and cost High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98518A (7/00) 2000 IXYS All rights reserved 1 - 2IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 Symbol Test Conditions Characteristic Values TO-247 AD (IXSH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 10 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 3100 pF ies C V = 25 V, V = 0 V, f = 1 MHz 240 pF oes CE GE C 50 pF res Q 100 nC Dim. Millimeter Inches g Min. Max. Min. Max. Q I = I , V = 15 V, V = 0.5 V 30 nC ge C C90 GE CE CES A 19.81 20.32 0.780 0.800 Q 38 nC gc B 20.80 21.46 0.819 0.845 t 30 ns d(on) Inductive load, T = 25 C C 15.75 16.26 0.610 0.640 J t 30 ns D 3.55 3.65 0.140 0.144 ri I = I V = 15 V C C90 GE t 90 150 ns E 4.32 5.49 0.170 0.216 d(off) V = 0.8 V R = 4.7 t CE CES G 70 120 ns F 5.4 6.2 0.212 0.244 fi Note 1. E 0.7 1.2 mJ G 1.65 2.13 0.065 0.084 off H - 4.5 - 0.177 t 35 ns d(on) Inductive load, T = 125 C J 1.0 1.4 0.040 0.055 J t 35 ns ri K 10.8 11.0 0.426 0.433 I = I V = 15 V E 0.5 mJ C C90 GE on L 4.7 5.3 0.185 0.209 t 150 ns V = 0.8 V R = 4.7 M 0.4 0.8 0.016 0.031 d(off) CE CES G t 140 ns fi N 1.5 2.49 0.087 0.102 Note 1 E 1.2 mJ off R 0.62 K/W TO-264 AA (IXSK) Outline thJC R TO-247 0.25 K/W thCK R TO-264 0.15 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. O V I = I , V = 0 V T = 150 C 1.7 V F F C90 GE J O Note 2 T = 150 C 2.5 V J Dim. Millimeter Inches I I = 100A V = 0 V T = 100 C 2 2.5 A Min. Max. Min. Max. RM F GE J A 4.82 5.13 .190 .202 V = 100 V -di /dt = 100 A/ s R F A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 t I = 1 A -di/dt = 100 A/ s V = 30 V T =25 C35 50 ns rr F R J b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 R 1.0 K/W b2 2.90 3.09 .114 .122 thJC c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , higher T or increased R . CE CES J G E 19.81 19.96 .780 .786 2. Pulse test, t 300 s, duty cycle d 2 % e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 3 TO-268AA (IXST) (D PAK) Dim. Millimeter Inches L 20.32 20.83 .800 .820 Min. Max. Min. Max. L1 2.29 2.59 .090 .102 A 4.9 5.1 .193 .201 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 A 2.7 2.9 .106 .114 1 Q1 8.38 8.69 .330 .342 A .02 .25 .001 .010 2 R 3.81 4.32 .150 .170 b 1.15 1.45 .045 .057 R1 1.78 2.29 .070 .090 b 1.9 2.1 .75 .83 2 S 6.04 6.30 .238 .248 C .4 .65 .016 .026 T 1.57 1.83 .062 .072 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 Min. Recommended Footprint E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025