High Voltage, IXSH 35N120A V = 1200 V CES High speed IGBT I = 70 A C25 V = 4 V CE(sat) Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25 C to 150 C 1200 V CES J V T = 25 C to 150 C R = 1 M 1200 V CGR J GE V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25 C70A C25 C G = Gate, C = Collector, I T = 90 C35A C90 C E = Emitter, TAB = Collector I T = 25 C, 1 ms 140 A CM C SSOA V = 15 V, T = 125 C, R = 22 I = 70 A GE J G CM (RBSOA) Clamped inductive load, L = 30 H 0.8 V CES t V = 15 V, V = 0.6 V , T = 125 C 10 s SC GE CE CES J (SCSOA) R = 22 non repetitive G Features P T = 25 C 300 W C C International standard package T -55 ... +150 C JEDEC TO-247 J High frequency IGBT with guaranteed T 150 C JM Short Circuit SOA capability T -55 ... +150 C stg Fast Fall Time for switching speeds up to 20 kHz M Mounting torque 1.13/10 Nm/lb.in. d TM 2nd generation HDMOS process Weight 6g Low V CE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Symbol Test Conditions Characteristic Values Applications (T = 25 C, unless otherwise specified) J AC motor speed control min. typ. max. DC servo and robot drive Uninterruptible power supplies (UPS) BV I = 3 mA, V = 0 V 1200 V CES C GE Switch-mode and resonant-mode V I = 4 mA, V = V 46 8 V GE(th) C CE GE power supplies Welding I V = 0.8 V T = 25 C 400 A CES CE CES J V = 0 V T = 125 C 1.2 mA GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) V I = I , V = 15 V 4 V CE(sat) C C90 GE High power density IXYS reserves the right to change limits, test conditions, and dimensions. 92774E (12/96) 2000 IXYS All rights reserved 1 - 4IXSH 35N120A Symbol Test Conditions Characteristic Values TO-247 AD (IXSH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 20 26 S fs C C90 CE Pulse test, t 300 s, duty cycle d 2 % I V = 15 V, V = 10 V 170 A C(on) GE CE C 3750 pF ies C V = 25 V, V = 0 V, f = 1 MHz 235 pF oes CE GE C 60 pF res Q 150 190 nC g Q I = I , V = 15 V, V = 0.5 V 40 60 nC ge C C90 GE CE CES Q 70 100 nC gc Dim. Millimeter Inches Min. Max. Min. Max. Inductive load, T = 25 C t J 80 ns d(on) A 19.81 20.32 0.780 0.800 I = I , V = 15 V, L = 100 H B 20.80 21.46 0.819 0.845 t C C90 GE 150 ns ri V = 0.8 V , R = 2.7 CE CES G C 15.75 16.26 0.610 0.640 t 400 900 ns d(off) D 3.55 3.65 0.140 0.144 Remarks: Switching times may t 500 700 ns fi increase for V (Clamp) > 0.8 V , E 4.32 5.49 0.170 0.216 CE CES F 5.4 6.2 0.212 0.244 higher T or increased R E 10 mJ J G off G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 t 80 ns d(on) Inductive load, T = 125 C J J 1.0 1.4 0.040 0.055 t 150 ns I = I , V = 15 V, L = 100 H ri K 10.8 11.0 0.426 0.433 C C90 GE E 2.5 mJ L 4.7 5.3 0.185 0.209 V = 0.8 V , R = 2.7 on CE CES G M 0.4 0.8 0.016 0.031 t 400 ns Remarks: Switching times may d(off) N 1.5 2.49 0.087 0.102 increase for V (Clamp) > 0.8 V , t 700 ns CE CES fi higher T or increased R J G E 15 mJ off R 0.42 K/W thJC R 0.25 K/W thCK IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025