V = 1400V High Voltage IXSH35N140A CES I = 35A High speed IGBT C90 V 4.0V CE(sat) Short Circuit SOA Capability t = 200ns fi(typ) TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1400 V CES J G V T = 25C to 150C, R = 1M 1400 V C CGR J GE E Tab V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C 70 A C25 C E = Emitter Tab = Collector I T = 90C 35 A C90 C I T = 25C, 1ms 140 A CM C SSOA V = 15V, T = 125C, R = 3 I = 70 A GE J G CM (RBSOA) Clamped Inductive Load V 960 V Features CE z t V = 15V, V = 840V, T = 125C 10 s International Standard Package SC GE CE J (SCSOA) R = 22, non Repetitive JEDEC TO-247AD G z High Frequency IGBT with Guaranteed P T = 25C 300 W C C Short Circuit SOA Capability z Fast Fall Time for Switching Speeds T -55 ... +150 C J up to 20kHz T 150 C JM z TM 2nd Generation HDMOS Process T -55 ... +150 C stg z Low V CE(SAT) M Mounting Torque 1.13 / 10 Nm/lb.in. - for Minimum on-state Conduction d Losses T Maximum Lead Temperature for Soldering 300 C L z MOS Gate turn-on T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD Weight 6 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z V I = 4mA, V = V 4.5 7.5 V DC-DC Converters GE(th) C CE GE z Switch-Mode and Resonant-Mode I V = V , V = 0V 50 A CES CE CES GE Power Supplies T = 125C 2 mA J z DC Choppers z I V = 0V, V = 20V 100 nA AC and DC Motor Drives GES CE GE z Uninterrupted Power Supplies V I = 35A, V = 15V, Note 1 3.4 4.0 V CE(sat) C GE z Welding 2011 IXYS CORPORATION, All Rights Reserved DS92716K(03/11) IXSH35N140A Symbol Test Conditions Characteristic Values TO-247 (IXSH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 35A, V = 10V, Note 1 16 23 S fs C CE C 3710 pF ies C V = 25V, V = 0V, f = 1MHz 230 pF P oes CE GE 1 2 3 C 73 pF res Q 120 nC g Q I = 35A, V = 15V, V = 0.5 V 32 nC ge C GE CE CES Q 50 nC gc t 40 ns e d(on) Inductive load, T = 25C J t 60 ns ri Terminals: 1 - Gate 2 - Collector I = 35A, V = 15V 3 - Emiiter C GE t 150 300 ns d(off) Dim. Millimeter Inches V = 960V, R = 3 CE G t 200 450 ns fi Min. Max. Min. Max. Note 2 A 4.7 5.3 .185 .209 E 4.0 mJ off A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 t 40 ns 2 d(on) b 1.0 1.4 .040 .055 Inductive load, T = 125C t 65 ns J ri b 1.65 2.13 .065 .084 1 I = 35A, V = 15V E 4.0 mJ b 2.87 3.12 .113 .123 C GE on 2 C .4 .8 .016 .031 t V = 960V, R = 3 240 ns d(off) CE G D 20.80 21.46 .819 .845 t 400 ns Note 2 fi E 15.75 16.26 .610 .640 E 9.5 mJ e 5.20 5.72 0.205 0.225 off L 19.81 20.32 .780 .800 R 0.42 C/W L1 4.50 .177 thJC P 3.55 3.65 .140 .144 R 0.21 C/W thCK Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Rght to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537