IXSH 45N120B High Voltage IGBT I = 75 A C25 IXST 45N120B V = 1200 V CES Series - Improved SCSOA Capability V = 3.0 V CE(sat) Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) V T = 25 C to 150 C 1200 V CES J V T = 25 C to 150 C R = 1 M 1200 V CGR J GE (TAB) V Continuous 20 V G GES C V Transient 30 V E GEM I T = 25 C (limited by leads) 75 A C25 C TO-268 ( IXST) I T = 90 C45A C90 C I T = 25 C, 1 ms 180 A CM C G SSOA V = 15 V, T = 125 C, R = 5 I = 90 A GE J G CM (TAB) E (RBSOA) Clamped inductive load 0.8 V CES t T = 125 C, V = 720 V V = 15 V, R = 5 10 s G = Gate C = Collector SC J GE GE G S = Emitter TAB = Collector P T = 25 C 300 W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d Maximum lead temperature for soldering 300 C Epitaxial Silicon drift region 1.6 mm (0.062 in.) from case for 10 s - fast switching - small tail current Weight TO-247 6 g MOS gate turn-on for drive simplicity Applications AC motor speed control Symbol Test Conditions Characteristic Values DC servo and robot drives (T = 25 C, unless otherwise specified) J Uninterruptible power supplies (UPS) min. typ. max. Switched-mode and resonant-mode power supplies BV I = 1.0 mA, V = 0 V 1200 V CES C GE Welding V I = 250 A, V = V 36V GE(th) C CE GE I V = 0.8 V 50 A CES CE CES Note 1 T = 125 C 2.5 mA J I V = 0 V, V = 20 V 100 nA GES CE GE V I = I V = 15 V 2.5 3.0 V CE(sat) C C90, GE Note 2 T = 125 C 2.6 V J IXYS reserves the right to change limits, test conditions, and dimensions. 98713A (7/00) 2000 IXYS All rights reserved 1 - 2IXSH 45N120B IXST 45N120B Symbol Test Conditions Characteristic Values TO-247 AD (IXSH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 16 23 S fs C C90 CE Note 2 C 3300 pF ies C V = 25 V, V = 0 V, f = 1 MHz 240 pF oes CE GE C 65 pF res Q 120 nC g Q I = I , V = 15 V, V = 0.5 V 40 nC ge C C90 GE CE CES Q 45 nC gc t 36 ns Inductive load, T = 25 C d(on) J Dim. Millimeter Inches Min. Max. Min. Max. t 27 ns I = I , V = 15 V ri C C90 GE A 19.81 20.32 0.780 0.800 R = 5 t G 360 500 ns d(off) B 20.80 21.46 0.819 0.845 V = 0.8 V CE CES t 380 750 ns fi C 15.75 16.26 0.610 0.640 Note 3 D 3.55 3.65 0.140 0.144 E 13 22 mJ off E 4.32 5.49 0.170 0.216 t 38 ns F 5.4 6.2 0.212 0.244 Inductive load, T = 125 C d(on) J G 1.65 2.13 0.065 0.084 t 29 ns I = I , V = 15 V ri C C90 GE H - 4.5 - 0.177 R = 5 V = 0.8 V E G CE CES 2.9 mJ on J 1.0 1.4 0.040 0.055 Note 3 K 10.8 11.0 0.426 0.433 t 440 ns d(off) L 4.7 5.3 0.185 0.209 t 700 ns fi M 0.4 0.8 0.016 0.031 E 22 mJ off N 1.5 2.49 0.087 0.102 R 0.42 K/W thJC 3 TO-268AA (D PAK) R (TO-247) 0.25 K/W thCK Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Switching times may increase for V (Clamp) > 0.8 V , higher T or CE CES J increased R . G Dim. Millimeter Inches Min. Max. Min. Max. Min. Recommended Footprint A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025